公开(公告)号：US09209143B2

公开(公告)日：2015-12-08

申请号：US14038248

申请日：2013-09-26

Applicant: Intel IP Corporation

Inventor： Georg Seidemann ,  Sven Albers ,  Teodora Ossiander ,  Michael Skinner ,  Hans-Joachim Barth ,  Harald Gossner ,  Reinhard Mahnkopf ,  Christian Mueller ,  Wolfgang Molzer

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/09 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/03444 ,  H01L2224/0346 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05016 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06155 ,  H01L2224/06183 ,  H01L2224/08054 ,  H01L2224/08056 ,  H01L2224/08057 ,  H01L2224/08121 ,  H01L2224/08137 ,  H01L2224/08225 ,  H01L2224/09135 ,  H01L2224/09183 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/16137 ,  H01L2224/48137 ,  H01L2224/80201 ,  H01L2224/80895 ,  H01L2224/81203 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An apparatus comprises a first integrated circuit (IC) die that includes a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, a second IC die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, wherein the second IC die is arranged adjacent to the first IC die, and includes an electrically conductive bond in contact with at least one of the top surface or the side surface of the multi-surface contact pad of the first IC die and the top surface of the multi-surface contact pad of the second IC die.

Abstract translation: 一种装置包括第一集成电路（IC）芯片，其包括顶层，底表面，从顶层的顶表面延伸到底表面的侧壁表面，以及至少一个多表面接触垫，第二 IC芯片包括顶层，底面，从顶层的顶表面延伸到底表面的侧壁表面，以及至少一个多表面接触焊盘，其中第二IC管芯被布置为与第一IC 并且包括与第一IC管芯的多表面接触焊盘的顶表面或侧表面中的至少一个与第二IC管芯的多表面接触焊盘的顶表面接触的导电接合 。

公开(公告)号：US09550670B2

公开(公告)日：2017-01-24

申请号：US14731211

申请日：2015-06-04

Applicant: Intel IP Corporation

Inventor： Christian Geissler ,  Thorsten Meyer ,  Gerald Ofner ,  Reinhard Mahnkopf ,  Andreas Augustin ,  Christian Mueller

IPC: H01L21/00 ,  B81C1/00 ,  B81B7/00 ,  H01L23/00 ,  H01L21/56

CPC classification number: B81C1/00666 ,  B81B7/0054 ,  B81C1/00261 ,  B81C1/00349 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01L21/568 ,  H01L23/3135 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/24137 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73207 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73277 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.

Abstract translation: 描述了用于集成微机电系统（MEMS）的应力缓冲层。 例如，半导体封装包括具有第一和第二表面的衬底，第二表面具有外部导电触点阵列。 微机电系统（MEMS）部件设置在基板的第一表面上方。 缓冲层设置在MEMS部件上方，缓冲层具有第一杨氏模量。 模具化合物设置在缓冲层上方，模塑料具有高于第一杨氏模量的第二杨氏模量。