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    STRUCTURES WITH THROUGH VIAS PASSING THROUGH A SUBSTRATE COMPRISING A PLANAR INSULATING LAYER BETWEEN SEMICONDUCTOR LAYERS
    1.
    发明申请
    STRUCTURES WITH THROUGH VIAS PASSING THROUGH A SUBSTRATE COMPRISING A PLANAR INSULATING LAYER BETWEEN SEMICONDUCTOR LAYERS 有权
    通过通过包含半导体层之间的平面绝缘层的基板通过VIAS的结构

    公开(公告)号：US20140346646A1

    公开(公告)日：2014-11-27

    申请号：US14456726

    申请日：2014-08-11

    Applicant: Invensas Corporation

    Inventor： Valentin KOSENKO ,  Sergey SAVASTIOUK

    IPC: H01L23/538

    CPC classification number: H01L23/5384 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: A through via contains a conductor (244, 262) passing through a substrate (140). The substrate can be SOI or some other substrate containing two semiconductor layers (140.1, 140.2) on opposite sides of an insulating layer (140B). The through via includes two constituent vias (144.1, 144.2) formed from respective different sides of the substrate by processes stopping on the insulating layer (140B). Due to the insulating layer acting as a stop layer, high control over the constituent vias' depths is achieved. Each constituent via is shorter than the through via, so via formation is facilitated. The conductor is formed by separate depositions of conductive material into the constituent vias from each side of the substrate. From each side, the conductor is deposited to a shallower depth than the through—via depth, so the deposition is facilitated. Other embodiments are also provided.

    Abstract translation: 通孔包含穿过衬底（140）的导体（244,262）。 衬底可以是在绝缘层（140B）的相对侧上包含两个半导体层（140.1,140.2）的SOI或一些其它衬底。 通孔包括通过在绝缘层（140B）上停止的工艺从基板的各个不同侧形成的两个构成通孔（144.1,144.2）。 由于绝缘层作为停止层，实现了对组成通孔深度的高度控制。 每个组分通孔比通孔更短，因此通过形成便利。 导体由导电材料从衬底的每一侧分离成为组成通孔形成。 从每侧，导体被沉积到比通孔深度更浅的深度，因此便于沉积。 还提供了其他实施例。

    STRUCTURES WITH THROUGH VIAS PASSING THROUGH A SUBSTRATE COMPRISING A PLANAR INSULATING LAYER BETWEEN SEMICONDUCTOR
    2.
    发明申请
    STRUCTURES WITH THROUGH VIAS PASSING THROUGH A SUBSTRATE COMPRISING A PLANAR INSULATING LAYER BETWEEN SEMICONDUCTOR 有权
    通过通过包含半导体平面绝缘层的基板通过VIAS的结构

    公开(公告)号：US20150348843A1

    公开(公告)日：2015-12-03

    申请号：US14824520

    申请日：2015-08-12

    Applicant: Invensas Corporation

    Inventor： Valentin KOSENKO ,  Sergey SAVASTIOUK

    IPC: H01L21/768 ,  H01L25/00

    CPC classification number: H01L23/5384 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: A through via contains a conductor (244, 262) passing through a substrate (140). The substrate can be SOI or some other substrate containing two semiconductor layers (140.1, 140.2) on opposite sides of an insulating layer (140B). The through via includes two constituent vias (144.1, 144.2) formed from respective different sides of the substrate by processes stopping on the insulating layer (140B). Due to the insulating layer acting as a stop layer, high control over the constituent vias' depths is achieved. Each constituent via is shorter than the through via, so via formation is facilitated. The conductor is formed by separate depositions of conductive material into the constituent vias from each side of the substrate. From each side, the conductor is deposited to a shallower depth than the through-via depth, so the deposition is facilitated. Other embodiments are also provided.

    Abstract translation: 通孔包含穿过衬底（140）的导体（244,262）。 衬底可以是在绝缘层（140B）的相对侧上包含两个半导体层（140.1,140.2）的SOI或一些其它衬底。 通孔包括通过在绝缘层（140B）上停止的工艺从基板的各个不同侧形成的两个构成通孔（144.1,144.2）。 由于绝缘层作为停止层，实现了对组成通孔深度的高度控制。 每个组分通孔比通孔更短，因此通过形成便利。 导体由导电材料从衬底的每一侧分离成为组成通孔形成。 从每侧，导体被沉积到比通孔深度更浅的深度，因此便于沉积。 还提供了其他实施例。

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