公开(公告)号：US20170022605A1

公开(公告)日：2017-01-26

申请号：US15124170

申请日：2015-02-23

Applicant: JOLED INC.

Inventor： Akira TAKIGUCHI

IPC: C23C14/54 ,  H01L51/52 ,  C23C14/24 ,  H01L51/56

CPC classification number: C23C14/542 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/564 ,  H01L51/5215 ,  H01L51/56

Abstract: A vapor deposition apparatus that performs co-deposition to deposit different vapor deposition materials onto a vapor deposition target. The vapor deposition apparatus includes: a chamber accommodating the vapor deposition target; a first vapor deposition source ejecting vapor of a first vapor deposition material towards the vapor deposition target; a second vapor deposition source ejecting vapor of a second vapor deposition material differing from the first vapor deposition material towards the vapor deposition target; a first heater heating the first vapor deposition material; a second heater heating the second vapor deposition material; and a heat controller controlling the first and second heaters. The heat controller is capable of controlling the first and second heaters so that increasing of the temperature of the second vapor deposition material is commenced after a predetermined time period has elapsed from commencement of increasing of the temperature of the first vapor deposition material.

Abstract translation: 一种气相沉积设备，其执行共沉积以将不同的气相沉积材料沉积到气相沉积靶上。 蒸镀装置包括：容纳蒸镀靶的室; 将第一气相沉积材料的蒸汽喷射到气相沉积靶的第一气相沉积源; 将不同于第一气相沉积材料的第二气相沉积材料的蒸汽喷射到气相沉积靶的第二气相沉积源; 加热第一蒸镀材料的第一加热器; 加热第二蒸镀材料的第二加热器; 以及控制第一和第二加热器的热控制器。 热控制器能够控制第一和第二加热器，使得在从第一蒸镀材料的温度开始开始经过预定时间段之后，开始增加第二蒸镀材料的温度。

公开(公告)号：US20180298489A1

公开(公告)日：2018-10-18

申请号：US16015946

申请日：2018-06-22

Applicant: JOLED INC.

Inventor： Akira TAKIGUCHI

IPC: C23C14/54 ,  C23C14/24 ,  C23C14/56 ,  H01L51/52 ,  C23C14/12 ,  H01L51/56

Abstract: A vapor deposition method for depositing different vapor deposition materials onto a vapor deposition target provided in a chamber is disclosed. A first vapor deposition material is heated, via a first heater, for a predetermined period for increasing a temperature of the first vapor deposition material. Based on the increased heat, vapor of the first vapor deposition material is ejected from a first vapor deposition source towards the vapor deposition target. After the predetermined period has elapsed and via a second heater, the second vapor deposition material is heated for increasing a temperature of a second vapor deposition material. Based on the increased heat, vapor of the second vapor deposition material is ejected from a second vapor deposition source towards the vapor deposition target. The first vapor deposition material contains an organic functional material, and the second vapor deposition material contains a metal material.

公开(公告)号：US20170051394A1

公开(公告)日：2017-02-23

申请号：US15124145

申请日：2015-02-24

Applicant: JOLED INC.

Inventor： Akira TAKIGUCHI

IPC: C23C14/24 ,  C23C14/54 ,  H01L51/05 ,  H01L51/56 ,  H01L51/00

CPC classification number: C23C14/243 ,  C23C14/542 ,  C23C14/564 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/56 ,  H05B33/10

Abstract: A vapor deposition apparatus including: a chamber that holds an object on which a film is to be deposited through vapor deposition; a vapor deposition source that is disposed inside the chamber, the vapor deposition source having a housing that accommodates therein a vapor deposition material for the vapor deposition; and a heater that heats the vapor deposition material. The housing has a plurality of eject outlets and an air outlet that is openable and closable, the plurality of eject outlets connecting the inside of the housing with the outside of the housing and ejecting vapor of the vapor deposition material towards the object.

Abstract translation: 一种气相沉积设备，包括：通过气相沉积保持要沉积膜的物体的室; 气相沉积源，其设置在所述室内，所述气相沉积源具有容纳其中用于气相沉积的气相沉积材料的壳体; 以及加热气相沉积材料的加热器。 壳体具有多个喷射出口和可打开和关闭的空气出口，多个喷射出口将壳体的内部与壳体的外部连接并将气相沉积材料的蒸气喷射到物体。