THIN- FILM TRANSISTOR SUBSTRATE AND LUMINESCENT DEVICE

    公开(公告)号:US20200027900A1

    公开(公告)日:2020-01-23

    申请号:US16434425

    申请日:2019-06-07

    Applicant: JOLED INC.

    Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

    DISPLAY UNIT
    2.
    发明申请
    DISPLAY UNIT 审中-公开

    公开(公告)号:US20200227511A1

    公开(公告)日:2020-07-16

    申请号:US16830289

    申请日:2020-03-26

    Applicant: JOLED INC.

    Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

    DISPLAY UNIT
    3.
    发明申请
    DISPLAY UNIT 审中-公开

    公开(公告)号:US20190081125A1

    公开(公告)日:2019-03-14

    申请号:US16112770

    申请日:2018-08-27

    Applicant: JOLED INC.

    Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

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