公开(公告)号：US10230003B2

公开(公告)日：2019-03-12

申请号：US14915704

申请日：2014-06-25

Applicant: JOLED INC.

Inventor： Eiji Takeda ,  Toru Saito

IPC: G01R27/04 ,  H01L29/786 ,  H01L21/66 ,  G01R31/26 ,  G01R31/265 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

Abstract: A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e2, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.

公开(公告)号：US09595601B2

公开(公告)日：2017-03-14

申请号：US14956830

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Yuichiro Miyamae ,  Kenichirou Nishida ,  Toru Saito

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/47635 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78693

Abstract: A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a substrate; forming a source electrode and a drain electrode by processing the metal film in a predetermined shape; irradiating the source electrode and the drain electrode with nitrogen plasma; exposing surfaces of a top and an end portion of the source electrode and the drain electrode with silane (SiH4) gas; and forming an insulating layer comprising an oxide on the source electrode and the drain electrode.

Abstract translation: 制造包括薄膜半导体的薄膜晶体管基板的方法包括：在基板上形成主要包含Cu的金属膜; 通过以预定形状加工金属膜形成源电极和漏电极; 用氮等离子体照射源电极和漏电极; 用硅烷（SiH 4）气体暴露源极和漏电极的顶部和端部的表面; 以及在源电极和漏电极上形成包含氧化物的绝缘层。