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    OPTICAL FILTER, AMBIENT LIGHT SENSOR AND SENSOR MODULE
    1.
    发明申请
    OPTICAL FILTER, AMBIENT LIGHT SENSOR AND SENSOR MODULE 审中-公开

    公开(公告)号：US20180364095A1

    公开(公告)日：2018-12-20

    申请号：US15779850

    申请日：2016-11-28

    Applicant: JSR CORPORATION

    Inventor： Katsuya NAGAYA ,  Toshihiro OTSUKI ,  Daisuke SHIGEOKA ,  Takashi TSUBOUCHI

    IPC: G01J1/04 ,  G01J1/42 ,  G01S17/08 ,  G02B5/20 ,  G02B1/04 ,  G02B5/26

    Abstract: One object of the present disclosure is to show an optical filter capable of realizing both an excellent visible light transmittance and an excellent near-infrared ray-shielding performance even if an incident angle becomes large. The optical filter of the present disclosure has a base material (i) including a light absorbing layer, and transmits visible light, wherein the light absorbing layer has a maximum absorption in a wavelength range of 750 nm to 1,150 nm, and in a wavelength range of 850 nm to 1,050 nm, an average OD value measured in a direction perpendicular to the optical filter is 2.0 or more, and an average OD value measured at an angle of 60° with respect to the direction perpendicular to the optical filter is 2.0 or more.

    OPTICAL FILTER AND AMBIENT LIGHT SENSOR INCLUDING OPTICAL FILTER
    2.
    发明申请
    OPTICAL FILTER AND AMBIENT LIGHT SENSOR INCLUDING OPTICAL FILTER 审中-公开

    公开(公告)号：US20190137670A1

    公开(公告)日：2019-05-09

    申请号：US16239243

    申请日：2019-01-03

    Applicant: JSR Corporation

    Inventor： Katsuya NAGAYA ,  Toshihiro Otsuki ,  Takashi TSUBOUCHI

    IPC: G02B5/22 ,  G01J1/42 ,  G01J1/04 ,  G01J1/02 ,  H01L31/0232 ,  G02B5/28

    Abstract: An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权

    公开(公告)号：US20170345860A1

    公开(公告)日：2017-11-30

    申请号：US15531972

    申请日：2015-11-26

    Applicant: JSR Corporation

    Inventor： Katsuya NAGAYA ,  Takashi TSUBOUCHI ,  Mibuko SHIMADA ,  Koji HATAKEYAMA

    IPC: H01L27/146 ,  G02B5/22 ,  G02B1/00 ,  H04N5/369 ,  H04N5/33

    CPC classification number: H01L27/14621 ,  G02B1/00 ,  G02B5/201 ,  G02B5/208 ,  G02B5/22 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/33 ,  H04N5/369

    Abstract: The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy. A solid-state imaging device includes a first optical layer that transmits visible light and at least a part of near-infrared light, a second optical layer that absorbs at least a part of the near-infrared light and a pixel array that includes a first light-receiving element that detects the visible light transmitted through the first optical layer and the second optical layer and a second light-receiving element that detects the near-infrared light transmitted through the first optical layer, in which the second optical layer has an opening at a part corresponding to the second light-receiving element, the first optical layer includes a compound (A) having at least one absorption maximum at the wavelength of from 750 to 900 nm,the second optical layer includes a compound (B) having at least one absorption maximum at the wavelength of from 755 to 1050 nm, an absorption maximum wavelength on a longest wavelength side of the compound (B) is larger than an absorption maximum wavelength on the longest wavelength side of the compound (A), and a difference between both is from 5 to 150 nm.

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