公开(公告)号：US20100212727A1

公开(公告)日：2010-08-26

申请号：US12709718

申请日：2010-02-22

Applicant: Ji Ung LEE

Inventor： Ji Ung LEE

IPC: H01L31/00 ,  D01F9/12 ,  H01B1/04 ,  C01B31/04 ,  B01J19/00 ,  B01J19/08 ,  F28D21/00 ,  H01L33/04

CPC classification number: D01F9/12 ,  B01J6/00 ,  B01J16/005 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/164 ,  C01B2202/22 ,  H01L31/028 ,  H01L31/04

Abstract: A method for continuously growing carbon nanotubes may include providing a melt comprising carbon and a catalyst at a temperature between about 1,200 degrees Celsius and about 2,500 degrees Celsius, selecting a carbon nanotube seed having at least one of a semiconductor electrical property and a metallic electrical property from a plurality of carbon nanotube seeds, contacting the selected carbon nanotube seed to a surface of the melt, and moving the selected carbon nanotube seed away from the surface of the melt at a rate operable to continuously grow a carbon nanotube, and continuously growing the carbon nanotube having the selected electrical property. Method for continuously growing a graphene sheet, and apparatus for continuously growing carbon nanotubes and graphene sheets are also disclosed.

Abstract translation: 用于连续生长碳纳米管的方法可以包括在约1200摄氏度至约2500摄氏度之间的温度下提供包含碳和催化剂的熔体，选择具有半导体电性能和金属电性能中的至少一种的碳纳米管种子 从多个碳纳米管种子中，将所选择的碳纳米管种子接触到熔体的表面，并且以可操作以连续生长碳纳米管的速率将选定的碳纳米管种子从熔融物表面移开，并连续生长 具有所选电性能的碳纳米管。 还公开了用于连续生长石墨烯片的方法，以及连续生长碳纳米管和石墨烯片的装置。