公开(公告)号：US20160380409A1

公开(公告)日：2016-12-29

申请号：US15191826

申请日：2016-06-24

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew Ooi ,  Abdul Majid Mohammed ,  Rami Afandy ,  Ahmed Aljabr

IPC: H01S5/343 ,  H01S5/34

CPC classification number: H01S5/343 ,  H01S5/3201 ,  H01S5/34326 ,  H01S5/34333 ,  H01S2304/04

Abstract: Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Abstract translation: 提供了用于修改半导体量子阱激光二极管的发射波长的方法，例如。 通过蓝色移动发射波长。 该方法可以应用于各种半导体量子阱激光二极管，例如， III-V族半导体量子阱。 III-V族半导体可以包括AlxBiAlAs，AlN，AlP，BN，GaSb，GaAs，GaN，GaP，InSb，InAs，InN和InP以及III-V族三元半导体合金，如AlxGai.xAs。 该方法可导致约20meV至350meV的蓝移，其可用于例如制备具有橙色或黄色的发射的III-V族半导体量子阱激光二极管。 还提供了制造半导体量子阱激光二极管和由其制成的半导体量子阱激光二极管的方法。