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公开(公告)号：US20230400780A1
公开(公告)日：2023-12-14
申请号：US18114451
申请日：2023-02-27
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew V. Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
CPC classification number: G03F7/70633 , G02B27/283 , G03F7/70641 , H04N23/56
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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公开(公告)号：US20210240089A1
公开(公告)日：2021-08-05
申请号：US16996254
申请日：2020-08-18
Applicant: KLA Corporation
Inventor： Anna Golotsvan , Inna Tarshish-Shapir , Mark Ghinovker , Rawi Dirawi
IPC: G03F7/20 , G01N23/2251 , G01N21/47
Abstract: A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.
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公开(公告)号：US11761969B2
公开(公告)日：2023-09-19
申请号：US16747734
申请日：2020-01-21
Applicant: KLA Corporation
Inventor： Renan Milo , Roie Volkovich , Anna Golotsvan , Tal Yaziv , Nir BenDavid
CPC classification number: G01N35/00623 , G01N35/00693 , G06N20/00
Abstract: A system for analyzing one or more samples includes a sample analysis sub-system configured to perform one or more measurements on the one or more samples. The system further includes a controller configured to: receive design of experiment (DoE) data for performing the one or more measurements on the one or more samples; determine rankings for a set of target parameters; generate a recipe for performing the one or more measurements on the one or more samples based on the DoE data and the rankings of the set of target parameters; determine run parameters based on the recipe; perform the one or more measurements on the one or more samples, via the sample analysis sub-system, according to the recipe; and adjust the run parameters based on output data associated with performing the one or more measurements on the one or more samples.
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公开(公告)号：US11353799B1
公开(公告)日：2022-06-07
申请号：US16928468
申请日：2020-07-14
Applicant: KLA Corporation
Inventor： Roie Volkovich , Liran Yerushalmi , Anna Golotsvan , Rawi Dirawi , Chen Dror , Nir BenDavid , Amnon Manassen , Oren Lahav , Shlomit Katz
Abstract: A metrology system includes a controller communicatively coupled to one or more metrology tools, the controller including one or more processors configured to execute program instructions causing the one or more processors to receive one or more metrology measurements of one or more metrology targets of a metrology sample, a metrology target of the one or more metrology targets including one or more target designs with one or more cells, the one or more target designs being generated on one or more layers of the metrology sample; determine one or more errors based on the one or more metrology measurements; and determine one or more correctables to adjust one or more sources of error corresponding to the one or more errors, the one or more correctables being configured to reduce an amount of noise in the one or more metrology measurements generated by the one or more sources of errors.
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公开(公告)号：US20220155693A1
公开(公告)日：2022-05-19
申请号：US16928468
申请日：2020-07-14
Applicant: KLA Corporation
Inventor： Roie Volkovich , Liran Yerushalmi , Anna Golotsvan , Rawi Dirawi , Chen Dror , Nir BenDavid , Amnon Manassen , Oren Lahav , Shlomit Katz
Abstract: A metrology system includes a controller communicatively coupled to one or more metrology tools, the controller including one or more processors configured to execute program instructions causing the one or more processors to receive one or more metrology measurements of one or more metrology targets of a metrology sample, a metrology target of the one or more metrology targets including one or more target designs with one or more cells, the one or more target designs being generated on one or more layers of the metrology sample; determine one or more errors based on the one or more metrology measurements; and determine one or more correctables to adjust one or more sources of error corresponding to the one or more errors, the one or more correctables being configured to reduce an amount of noise in the one or more metrology measurements generated by the one or more sources of errors.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20210366790A1
公开(公告)日：2021-11-25
申请号：US16956357
申请日：2020-06-18
Applicant: KLA CORPORATION
Inventor： Roie Volkovich , Anna Golotsvan
Abstract: A multiple-tool parameter set calibration and misregistration measurement method useful in the manufacture of semiconductor devices including using at least a first reference misregistration metrology tool using a first set of measurement parameters to measure misregistration between at least two layers on a wafer of a batch of wafers, thereby generating a first misregistration data set, transmitting the first set of parameters and the data set to a calibrated set of measurement parameters generator (CSMPG) which processes the first set of parameters and the data set thereby generating a calibrated set of measurement parameters which are transmitted from the CSMPG to calibrate at least one initially-uncalibrated misregistration metrology tool based on the calibrated set of measurement parameters. Thereafter, misregistration is measured between at least two layers of at least one wafer, using at least the initially-uncalibrated misregistration metrology tool using the calibrated set of measurement parameters for the measuring.
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公开(公告)号：US12222199B2
公开(公告)日：2025-02-11
申请号：US17254253
申请日：2020-11-05
Applicant: KLA Corporation
Inventor： Roie Volkovich , Nachshon Rothman , Yossi Simon , Anna Golotsvan , Vladimir Levinski , Nireekshan K. Reddy , Amnon Manassen , Daria Negri , Yuri Paskover
Abstract: A system for use with a misregistration metrology tool (MMT), the system including a database including a plurality of process variation (PV) categories and a corresponding plurality of parameter sets and a process variation accommodation engine (PVAE) including a measurement site process variation category associator (MSPVCA) operative to associate a measurement site being measured by the MMT, at least partially based on an MMT output relating to the measurement site, with a measurement site process variation category (MSPVC), the MSPVC being one of the plurality of PV categories, a measurement site parameter set retriever (MSPSR) operative to retrieve a measurement site parameter set (MSPS) corresponding to the MSPVC and a measurement site parameter set communicator (MSPSC) operative to communicate the MSPS to the MMT.
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公开(公告)号：US11592755B2
公开(公告)日：2023-02-28
申请号：US17219869
申请日：2021-03-31
Applicant: KLA Corporation
Inventor： Amnon Manassen , Andrew Hill , Yonatan Vaknin , Yossi Simon , Daria Negri , Vladimir Levinski , Yuri Paskover , Anna Golotsvan , Nachshon Rothman , Nireekshan K. Reddy , Nir BenDavid , Avi Abramov , Dror Yaacov , Yoram Uziel , Nadav Gutman
Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
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公开(公告)号：US20220334501A1
公开(公告)日：2022-10-20
申请号：US17351137
申请日：2021-06-17
Applicant: KLA Corporation
Inventor： Eitan Hajaj , Amnon Manassen , Shlomo Eisenbach , Anna Golotsvan , Yoav Grauer , Eugene Maslovsky
Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.
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公开(公告)号：US11726410B2
公开(公告)日：2023-08-15
申请号：US17351137
申请日：2021-06-17
Applicant: KLA Corporation
Inventor： Eitan Hajaj , Amnon Manassen , Shlomo Eisenbach , Anna Golotsvan , Yoav Grauer , Eugene Maslovsky
CPC classification number: G03F7/70633 , G03F7/70683 , H01L22/12
Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.
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