公开(公告)号：US12211899B2

公开(公告)日：2025-01-28

申请号：US17583206

申请日：2022-01-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun Kim ,  Seung Hwan Kim

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/10

Abstract: Embodiments relate to a semiconductor device, which includes: a substrate made of a first material; an insulating layer formed on an upper surface of the substrate; a trench formed at the insulating layer to penetrate the insulating layer toward the substrate; and a seed layer disposed in the trench. The seed layer is made of a second material, the second material lattice-mismatches with respect to the first material, the seed layer includes a threading dislocation extending at least partially in a first direction non-parallel to the upper surface of the substrate and parallel to a direction of a (111) plane and a threading dislocation extending at least partially in a second direction, and the extension of the threading dislocation is terminated at a sidewall of the trench.