Abstract:
A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the channel layer are c facets of Ga or In atoms; an electron donor layer including AlGaN formed on the channel layer, wherein: surfaces of the electron donor layer are c facets of Al or Ga atoms; a source electrode and a drain electrode formed on the electron donor layer; a cap layer including GaN or InGaAlN formed between the source electrode and the drain electrode, wherein: surfaces of the cap layer are c facets of Ga or In atoms and at least a portion of the cap layer is in contact with the electron donor layer; and a gate electrode formed at least a portion of which is in contact with the cap layer.
Abstract:
Disclosed is a polyvinyl alcohol resin composition capable of providing a melt-molded article with superior gas barrier properties and flex crack resistance. The resin composition comprises (A) a PVA resin having 1,2-diol unit in side chain thereof; and (B) a mixture of block copolymers each having an aromatic vinyl polymer block, and a conjugated diene polymer block and/or hydrogenated thereof, wherein the (B) mixture of block copolymers includes (B1) a block copolymer having no carboxyl group and (B2) a block copolymer modified with a carboxyl group-containing compound.
Abstract:
A back light unit includes a light guide plate having a rectangle shape with first and second edges and a light source having a light element to emit light to a first edge of the light guide plate. The light guide plate emits the incident light from the light source to a liquid crystal display panel as a flat light source. An elastic frame is integrally formed with first and second frame elements in a rectangle shape so as to surround the light guide plate. The light source includes a metal frame clipped by a clip shape implemented provided in the first frame element. The first edge facing the second edge of the light guide plate is fitted to the metal frame. The second edge of the light guide plate is fitted to a second frame element having a clip portion for clipping the light guide plate.
Abstract:
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
Abstract:
A liquid crystal display device includes an area light source unit which is opposed to one of polarizer. The area light source unit includes a light guide having a light incidence surface opposed to a cold cathode tube, a light emission surface which emits light that is incident on the light incidence surface, and an opposed surface which is opposed to the light emission surface, and a prismatic sheet disposed between the polarizer plate and the light guide. The light guide has prisms on at least the opposed surface. The prismatic sheet has prisms which extend in a direction that is displaced counterclockwise by a first predetermined angle from a direction that is perpendicular to a direction of extension of the prisms. An angle between a polarization axis of the polarizer plate and a polarization axis of the prismatic sheet is set at a second predetermined angle.