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公开(公告)号:US11672504B2
公开(公告)日:2023-06-13
申请号:US17513393
申请日:2021-10-28
Applicant: Khalifa University of Science and Technology
Inventor: Jerald Yoo , Judyta B. Tillak
IPC: A61B8/14 , B06B1/02 , B06B1/06 , G01N29/24 , G01N29/44 , A61B8/00 , G01S7/52 , G01S15/89 , G01N29/06 , G01N29/34
CPC classification number: A61B8/145 , A61B8/4488 , A61B8/4494 , B06B1/0215 , B06B1/0292 , B06B1/0607 , G01N29/0654 , G01N29/2406 , G01N29/2437 , G01N29/34 , G01N29/4463 , G01S7/5208 , G01S7/52047 , G01S7/52049 , G01S15/8915 , A61B8/4427 , A61B8/56 , A61B8/58
Abstract: The present disclosure is generally directed to a method for driving an ultrasonic transducer. The method includes coupling a driving electrode and a ground electrode of the ultrasonic transducer to a power supply and a ground, respectively, during a first time period based on a received drive signal. The method further includes decoupling the driving electrode and the ground electrode of the ultrasonic transducer from the power supply and the ground, respectively, to float the driving electrode and the ground electrode of the ultrasonic transducer during a second time period based on the received drive signal to store a charge between the driving electrode to the ground electrode.
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公开(公告)号:US11185304B2
公开(公告)日:2021-11-30
申请号:US15802772
申请日:2017-11-03
Applicant: Khalifa University of Science and Technology
Inventor: Jerald Yoo , Judyta B. Tillak
IPC: A61B8/14 , B06B1/02 , B06B1/06 , G01N29/24 , G01N29/44 , A61B8/00 , G01S7/52 , G01S15/89 , G01N29/06 , G01N29/34
Abstract: The present disclosure is generally directed to an ultrasonic transducer interface system for use within portable 2-D ultrasonic imagers and includes an on-chip adaptive beamformer and Charge-Redistribution TX (CR-TX) to provide a drive strength of up to 500 pF/channel at 5 MHz (or 10 nF at 250 kHz) while reducing the TX drive power by at least 30% compared to other ultrasonic transducer TX drivers. The ultrasonic transducer interface system can be implemented in a single chip via, for example, a complementary metal oxide semiconductor (CMOS) process.
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