公开(公告)号：US20210325941A1

公开(公告)日：2021-10-21

申请号：US17361949

申请日：2021-06-29

Applicant: KunShan Go-Visionox Opto-Electronics Co., Ltd.

Inventor： Hongqi HOU ,  Qi SHAN ,  Jianping CHEN ,  Fu LIAO ,  Liwei DING ,  Zhaoji ZHU ,  Liuyang WANG ,  Kanglong SUN

IPC: G06F1/16 ,  F16C11/04

Abstract: A support apparatus for a flexible screen, a foldable display module and a display device. The support apparatus for the flexible screen includes a support portion and a driving assembly. The support portion includes a first support portion and a second support portion connected with the first support portion. The driving assembly includes a rotary shaft assembly and a linkage assembly connected with the rotary shaft assembly. The rotary shaft assembly includes a plurality of rotary shafts arranged in parallel. The second support portion is slidably provided on the rotary shaft assembly and can be bent or unfolded together with the rotary shaft assembly. When the rotary shaft assembly is bent, the first support portion is driven by the linkage assembly to move away from or close to the rotary shaft assembly.

公开(公告)号：US20180341291A1

公开(公告)日：2018-11-29

申请号：US15778481

申请日：2017-03-09

Applicant: KUNSHAN NEW FLAT PANEL DISPLAY TECHNOLOGY CENTER CO., LTD. ,  KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD.

Inventor： Qi SHAN ,  Kun HU ,  Li LIN ,  Shixing CAI ,  Shengfang LIU

IPC: G06F1/16 ,  H01L51/00 ,  H01L27/32 ,  G02F1/1333

Abstract: Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device (200) comprises a flexible substrate (210) and a device layer formed on the flexible substrate (210). The device layer comprises a semiconductor structure (220) and a wire structure (230) connected to the semiconductor structure, the wire structure (230) having an extension direction same to a channel direction of the semiconductor structure (220). The extension direction of the first wire structure (230) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate (210). In the flexible electronic device (200) and manufacturing method thereof of the present invention, the channel direction of the semiconductor structure (220) and the extension direction of the first wire structure (230) are adjusted, such that the semiconductor structure (220) and the first wire structure (230) are least affected by a stress, thus ensuring electrical property and flexibility of the flexible electronic device (200).

公开(公告)号：US20180097119A1

公开(公告)日：2018-04-05

申请号：US15830423

申请日：2017-12-04

Applicant: Kunshan Go-Visionox Opto-Electronics Co., Ltd. ,  Kunshan New Flat Panel Display Technology Center Co., Ltd.

Inventor： Qi SHAN ,  Xiuqi Huang ,  Shixing Cai ,  Xiaobao Zhang ,  Rui Guo ,  Li Lin ,  Xiaoyu Gao

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor and a preparation method thereof are provided. The thin film transistor includes an upper gate electrode, a lower gate electrode, an upper insulating layer, a lower insulating layer, a semiconductor layer, a source electrode and a drain electrode. The lower insulating layer is arranged on the lower gate electrode, the semiconductor layer is arranged on the lower insulating layer, the semiconductor layer is respectively lapped with the source electrode and the drain electrode, the upper insulating layer covers the semiconductor layer, and the upper gate electrode is arranged on the upper insulating layer. In a plane parallel to a conducting channel, there is a first gap between an orthographic projection of the upper gate electrode and an orthographic projection of the source electrode, and there is a second gap between the orthographic projection of the upper gate electrode and an orthographic projection of the drain electrode.