Gas sensor
    1.
    发明授权

    公开(公告)号:US10948405B2

    公开(公告)日:2021-03-16

    申请号:US16465990

    申请日:2017-02-22

    Abstract: The present invention relates to a gas sensor employing a non-dispersive infrared (NDIR) scheme. The gas sensor may comprise: a light source portion for emitting light; a light cavity portion for multi-reflecting the emitted light; a light detecting portion for detecting the multi-reflected light; a first light coupling portion for reflecting and concentrating the light emitted by the light source portion toward the light cavity portion; and a second light coupling portion for reflecting and concentrating the light reflected by the light cavity portion toward the light detecting portion. The first light coupling portion may comprise a light emitting surface that faces a side surface of the light cavity portion and has a via hole through which light passes, and a reflecting surface extending from the light emitting surface so as to surround the upper portion and the side portion of the light source portion such that light emitted by the light source portion is reflected toward the via hole of the light emitting surface. The second light coupling portion may comprise a light incident surface that faces a side surface of the light cavity portion and has a via hole through which light incident from the light cavity portion passes, and a reflecting surface extending from the light incident surface so as to surround the upper portion and the side portion of the light detecting portion such that light incident from the light cavity portion is reflected toward the light detecting portion.

    Display device using semiconductor light emitting device and fabrication method thereof

    公开(公告)号:US10340257B2

    公开(公告)日:2019-07-02

    申请号:US15604593

    申请日:2017-05-24

    Abstract: A display device using a semiconductor light emitting device and a fabrication method thereof is disclosed. A display device includes a plurality of semiconductor light emitting device packages; a wiring substrate coupled to the plurality of semiconductor light emitting device packages; and a plurality of wiring electrodes. A semiconductor light emitting device package includes a plurality of semiconductor light emitting devices; a support substrate coupled to the plurality of semiconductor light emitting devices; and a conversion layer configured to convert a color of light emitted from at least some of the plurality of semiconductor light emitting devices to a different color, forming a red sub-pixel, a green sub-pixel, and a blue sub-pixel. A semiconductor light emitting device corresponding to the red or green sub-pixel and a semiconductor light emitting device corresponding to the blue sub-pixel may have light emitting areas that are of different sizes.

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