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公开(公告)号：US20170229398A1
公开(公告)日：2017-08-10
申请号：US15519089
申请日：2015-08-11
Applicant: LG INNOTEK CO., LTD.
Inventor： Sung Kyoon KIM , Chung Song KIM , Ji Hyung MOON
CPC classification number: H01L23/535 , H01L27/0814 , H01L27/156 , H01L33/02 , H01L33/26 , H01L33/48 , H01L33/62 , H01L2223/58
Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M−1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1≦m≦M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1≦n≦M−1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.
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公开(公告)号：US20210036187A1
公开(公告)日：2021-02-04
申请号：US16761008
申请日：2018-11-02
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC: H01L33/20 , H01L25/075 , H01L33/00 , H01L25/16
Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.
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公开(公告)号：US20190378873A1
公开(公告)日：2019-12-12
申请号：US16463730
申请日：2017-11-24
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC: H01L27/15 , H01L25/065
Abstract: One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.
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公开(公告)号：US20190115328A1
公开(公告)日：2019-04-18
申请号：US16083134
申请日：2017-03-07
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , June O SONG
Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.
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公开(公告)号：US20150349220A1
公开(公告)日：2015-12-03
申请号：US14725469
申请日：2015-05-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Ji Hyung MOON , Sang Youl LEE , Bum Doo PARK , Chung Song KIM , Sang Rock PARK , Byung Hak JEONG , Tae Yong LEE
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46
Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.
Abstract translation: 公开了一种发光装置，其包括发光结构，该发光结构包括第一导电半导体层，第一导电半导体层下的有源层和有源层下的第二导电半导体层，与第一导电半导体层电连接的第一电极 在发光结构下方的镜面层，在镜面层和发光结构之间的窗口半导体层，反射层下面的反射层，反射层和窗口半导体层之间的导电接触层， 第二导电半导体层，以及在该反射层下方的导电支撑基板。 窗口半导体层包括掺杂较高掺杂剂浓度的C掺杂的P基半导体。 导电接触层包括与镜面层的材料不同的材料，其厚度比窗口半导体层的厚度薄。
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Patent Agency Ranking
公开(公告)号：US20200286949A1
公开(公告)日：2020-09-10
申请号：US16648860
申请日：2018-09-19
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Yong Tae MOON , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.
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公开(公告)号：US20190378760A1
公开(公告)日：2019-12-12
申请号：US16475874
申请日：2018-01-05
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , Hyeon Min CHO
IPC: H01L21/78 , H01L27/15 , H01L21/52 , H01L21/268 , H05B33/10
Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.
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公开(公告)号：US20190131494A1
公开(公告)日：2019-05-02
申请号：US16090051
申请日：2017-03-28
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , June O SONG
IPC: H01L33/38 , G09G3/22 , G09G3/3266 , G09G3/3258 , H01L27/12 , H01L29/417 , H01L29/423
Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.
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公开(公告)号：US20190115509A1
公开(公告)日：2019-04-18
申请号：US16089944
申请日：2017-03-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK
Abstract: One embodiment relates to a light-emitting device, a backlight unit and a lighting device. The light-emitting device of the embodiment includes a light-emitting structure and a phosphor layer disposed on the light-emitting structure. The first and second pads are electrically connected with the light-emitting structure, wherein the phosphor layer is disposed on one side of the light-emitting device, and the first and second pads are disposed on the lower part of the light-emitting device. Thus a side view-type light-emitting device having a simplified structure can be enabled. Thus, the embodiment can enable thinning and slimming by means of the simplified structure.
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公开(公告)号：US20190051672A1
公开(公告)日：2019-02-14
申请号：US16069130
申请日：2016-11-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Chung Song KIM , Ji Hyung MOON , Sun Woo PARK , June O SONG
IPC: H01L27/12 , H01L29/778 , H01L29/66 , G02F1/1343 , H01L29/20 , H01L29/205 , G02F1/1368 , G02F1/1362 , G02F1/1333
CPC classification number: H01L27/1225 , G02F1/13338 , G02F1/134363 , G02F1/136209 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , G02F2202/101 , G02F2202/102 , H01L27/1218 , H01L27/1266 , H01L27/3244 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L29/786
Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.
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