公开(公告)号：US20180090539A1

公开(公告)日：2018-03-29

申请号：US15540701

申请日：2015-12-30

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Hyoung SON ,  Keon Hwa LEE ,  Byeong Kyun CHOI ,  Kwang Ki CHOI

IPC: H01L27/15 ,  H01L23/00 ,  H01L33/30 ,  H01L33/62 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L27/156 ,  H01L21/67161 ,  H01L24/24 ,  H01L33/005 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.

公开(公告)号：US20170365744A1

公开(公告)日：2017-12-21

申请号：US15540507

申请日：2015-11-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Keon Hwa LEE ,  Su Hyoung SON

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/20 ,  H01L33/40 ,  H01L33/06

CPC classification number: H01L33/385 ,  H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/405

Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.