公开(公告)号：US20230132771A1

公开(公告)日：2023-05-04

申请号：US17912306

申请日：2021-03-17

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Heon HAN ,  Kang Yeol PARK ,  Jae Hoon LEE ,  Yong Gyeong LEE

IPC: G01S17/89 ,  H01S5/42 ,  G01S7/4865

Abstract: A surface-emitting laser device disclosed in an embodiment of the invention includes a first region in which a plurality of first emitters is arranged; and a second region in which a plurality of second emitters is arranged, an area of the second region is smaller than an area of the first region, and the second region is disposed in a center region of the first region, and the first emitter and the second emitter may be driven separately.

公开(公告)号：US20200036161A1

公开(公告)日：2020-01-30

申请号：US16465461

申请日：2017-12-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Baek Jun KIM ,  Ho Jae KANG ,  Hui Seong KANG ,  Keon Hwa LEE ,  Yong Gyeong LEE

IPC: H01S5/024 ,  H01S5/022 ,  H01S5/183

Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material. The diffusion unit may be disposed on the first upper surface of the first sidewall and may be disposed to be surrounded by the second sidewall.

公开(公告)号：US20190181300A1

公开(公告)日：2019-06-13

申请号：US16310340

申请日：2017-06-20

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Ik PARK ,  Youn Joon SUNG ,  Min Sung KIM ,  Yong Gyeong LEE ,  Eun Dk LEE

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/32

Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.

公开(公告)号：US20200083670A1

公开(公告)日：2020-03-12

申请号：US16469968

申请日：2017-12-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Baek Jun KIM ,  Ho Jae KANG ,  Keon Hwa LEE ,  Yong Gyeong LEE

IPC: H01S5/183 ,  H01S5/022

Abstract: Embodiments relate to a semiconductor device, an optical transmission module, and an optical transmission apparatus. An optical transmission module according to an embodiment includes a board; a submount disposed on a first surface of the board; a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a first surface of the submount; and a module housing including a coupling unit and a body, the coupling unit spaced apart from the vertical cavity surface emitting laser (VCSEL) semiconductor device and facing the first surface of the submount, the body extending from the coupling unit toward the first surface of the board and disposed around the submount and the vertical cavity surface emitting laser (VCSEL) semiconductor device.

公开(公告)号：US20190157504A1

公开(公告)日：2019-05-23

申请号：US16308594

申请日：2017-06-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Su IK PARK ,  Youn Joon SUNG ,  Yong Gyeong LEE ,  Min Sung KIM

IPC: H01L33/10 ,  H01L33/32 ,  H01L33/22 ,  H01L33/40 ,  H01L33/06

Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part of the second recess and coming into contact with the second electrode.

公开(公告)号：US20180226541A1

公开(公告)日：2018-08-09

申请号：US15749730

申请日：2016-07-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong LEE ,  Min Sung KIM ,  Su Ik PARK ,  Youn Joon SUNG ,  Kwang Yong CHOI

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40

Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.

公开(公告)号：US20190386189A1

公开(公告)日：2019-12-19

申请号：US16476773

申请日：2018-01-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Keon Hwa LEE ,  Su Ik PARK ,  Yong Gyeong LEE ,  Baek Jun KIM ,  Myung Sub KIM

IPC: H01L33/60 ,  H01L33/30 ,  H01L33/40

Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

公开(公告)号：US20190259910A1

公开(公告)日：2019-08-22

申请号：US16347010

申请日：2017-11-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Youn Joon SUNG ,  Ki Man KANG ,  Min Sung KIM ,  Su lk PARK ,  Yong Gyeong LEE ,  Eun Dk LEE ,  Hyun Soo LIM

IPC: H01L33/10 ,  H01L33/36 ,  H01L33/32 ,  H01L33/62

Abstract: Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

公开(公告)号：US20160126423A1

公开(公告)日：2016-05-05

申请号：US14927112

申请日：2015-10-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Se Yeon JUNG ,  Yong Gyeong LEE

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

Abstract translation: 公开了一种发光器件，其包括发光结构，该发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电流阻挡层，布置在待分离的发光结构上的第二电流阻挡层 彼此分别设置在第一电流阻挡层，第二电流阻挡层和发光结构上的透光导电层，分别电耦合到第一导电半导体层和第二导电半导体层的第一电极和第二电极 ，通过透光导电层形成的通孔，第二导电半导体层和有源层到第一导电半导体层的一部分，以及布置在通孔内的通孔。 这里，贯通电极在垂直方向上不与第一电流阻挡层重叠。

公开(公告)号：US20160005917A1

公开(公告)日：2016-01-07

申请号：US14755933

申请日：2015-06-30

Applicant: LG INNOTEK CO., LTD.

Inventor： Se Yeon JUNG ,  Yong Gyeong LEE

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/64 ,  H01L33/38 ,  H01L33/04 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

Abstract translation: 实施例提供一种发光装置，其包括基板，包括设置在基板上的第一导电型半导体层，有源层和第二导电型半导体层的发光结构，设置在第一导电型半导体层上的第一电极， 型半导体层和设置在第二导电型半导体层上的第二电极。 第一电极包括设置在第一导电类型半导体层上并由透明导电氧化物形成的欧姆接触层和设置在欧姆接触层上的反射层，欧姆接触层的厚度为1nm以上 超过60nm。