Abstract:
An active matrix display device includes a plurality of pixels arranged in a matrix form and at least one thin film transistor in each of the plurality of pixels, the at least one thin film transistor including a polycrystalline silicon layer formed by sequential lateral solidification. During fabrication, a mask with slits is disposed over a substrate having an amorphous silicon layer, a first laser beam is applied to a first area of the amorphous silicon layer through the mask, the substrate or laser is moved and the laser beam is applied to a second area of the amorphous silicon layer through the mask. Application of the laser crystallizes the amorphous silicon into a polycrystalline layer. The polycrystalline layers have a substantially identical number of grain boundaries, which in turn have a substantially identical direction and occur at substantially regular intervals.