Chemical vapor deposition apparatus
    1.
    发明申请
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号:US20020170498A1

    公开(公告)日:2002-11-21

    申请号:US10144806

    申请日:2002-05-15

    Inventor: Young Hun Paik

    CPC classification number: C23C16/5096 C23C16/4581 C23C16/4586

    Abstract: A chemical vapor deposition apparatus includes a ground voltage source, a susceptor for placing a substrate, a center pin passing through the susceptor for lifting the substrate, and a ground member for connecting the center pin to the ground voltage source.

    Abstract translation: 化学气相沉积装置包括接地电压源,用于放置基板的基座,通过基座提升基板的中心销,以及用于将中心销连接到地电压源的接地构件。

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