公开(公告)号：US20100314989A1

公开(公告)日：2010-12-16

申请号：US12809687

申请日：2008-12-19

Applicant: Lap-Tal Andrew Cheng

Inventor： Lap-Tal Andrew Cheng

IPC: H01J1/14 ,  G03F7/20 ,  B32B3/10

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H05K3/02 ,  H05K3/4053 ,  H05K2201/09827 ,  H05K2201/09981 ,  H05K2203/0508 ,  H05K2203/0783 ,  H05K2203/308 ,  Y10T428/24339 ,  Y10T428/24802

Abstract: This invention relates to a method for the fabrication of electrical and electronic devices using a photoresist deposited in pre-existing through holes in a device structure and a thick film paste, and to the devices made by such method. The method allows thick film paste deposits in the corners of the holes. This invention also relates to devices made with thick film pastes that are patterned using a diffusion layer made from residual photoresist deposits in a hole.

Abstract translation: 本发明涉及使用沉积在器件结构中的预先存在的通孔中的光致抗蚀剂和厚膜糊来制造电气和电子器件的方法以及由这种方法制造的器件。 该方法允许厚膜浆料沉积在孔的角部。 本发明还涉及使用由在孔中残留的光致抗蚀剂沉积物制成的扩散层进行图案化的厚膜糊制成的装置。