公开(公告)号：US20220254955A1

公开(公告)日：2022-08-11

申请号：US17578480

申请日：2022-01-19

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Yu CHIEN ,  Hou-Jun WU ,  Chun-I WU

IPC: H01L33/10

Abstract: A light emitting diode structure includes a metal reflective layer, a first transparent electrically-conductive layer, a dielectric layer, second transparent electrically-conductive layers, a first type semiconductor layer, an active layer and a second type semiconductor layer. The metal reflective layer has first concave sections. The first transparent electrically-conductive layer is conformally formed over the first concave sections of the metal reflective layer. The dielectric layer is formed over the first transparent electrically-conductive layer and has through holes to expose the first transparent electrically-conductive layer. The second transparent electrically-conductive layers are formed over the dielectric layer, and connected with the first transparent electrically-conductive layer via the through holes. Each second transparent electrically-conductive layer is connected to the first transparent electrically-conductive layer to form a T-shaped cross section in each first concave section.