公开(公告)号：US20130217215A1

公开(公告)日：2013-08-22

申请号：US13847433

申请日：2013-03-19

Applicant: Lockheed Martin Corporation

Inventor： Jonathan W. Ward ,  Michael J. O'CONNOR

IPC: H01L21/02

CPC classification number: H01L21/02282 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/043 ,  C01B31/0446 ,  C01B31/0476 ,  C01B31/0484 ,  C01B32/184 ,  C01B32/192 ,  C01B32/194 ,  C01B32/23 ,  C01B2204/02 ,  C01B2204/04 ,  C01B2204/22 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/31127 ,  H01L29/1606

Abstract: Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.

Abstract translation: 提供了用于制造具有半导体兼容工艺的石墨烯纳米电子器件的方法，其允许石墨烯纳米电子器件的晶片规模制造。 一种方法包括制备官能化石墨烯在溶剂中的分散体的步骤; 并将所述分散体的涂层施加到基底上并蒸发溶剂以形成功能化的石墨烯层; 并使石墨烯去官能化以在基底上形成石墨烯层。