公开(公告)号：US12021013B2

公开(公告)日：2024-06-25

申请号：US17547127

申请日：2021-12-09

Applicant: MEDIATEK INC.

Inventor： Chiang-Lin Yen ,  Che-Hung Kuo

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/49816 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/49822

Abstract: A semiconductor structure includes a semiconductor die having an active surface, a passivation layer covering the active surface of the semiconductor die, and a post-passivation interconnect (PPI) layer disposed over the passivation layer. The PPI layer includes a ball pad having a first diameter. A polymer layer covers a perimeter of the ball pad. An under-bump-metallurgy (UBM) layer is disposed on the ball pad. The UBM layer has a second diameter that is greater than the first diameter of the ball pad. A solder ball is mounted on the UBM layer.

公开(公告)号：US20220246508A1

公开(公告)日：2022-08-04

申请号：US17547127

申请日：2021-12-09

Applicant: MEDIATEK INC.

Inventor： Chiang-Lin Yen ,  Che-Hung Kuo

IPC: H01L23/498 ,  H01L23/31

Abstract: A semiconductor structure includes a semiconductor die having an active surface, a passivation layer covering the active surface of the semiconductor die, and a post-passivation interconnect (PPI) layer disposed over the passivation layer. The PPI layer includes a ball pad having a first diameter. A polymer layer covers a perimeter of the ball pad. An under-bump-metallurgy (UBM) layer is disposed on the ball pad. The UBM layer has a second diameter that is greater than the first diameter of the ball pad. A solder ball is mounted on the UBM layer.