INFRARED SENSOR WITH SENSOR TEMPERATURE COMPENSATION
    1.
    发明申请
    INFRARED SENSOR WITH SENSOR TEMPERATURE COMPENSATION 有权
    带传感器温度补偿的红外传感器

    公开(公告)号:US20150369669A1

    公开(公告)日:2015-12-24

    申请号:US14744410

    申请日:2015-06-19

    Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

    Abstract translation: 用于温度感测的红外传感器包括覆盖基板的盖子; IR辐射中的IR辐射过滤窗对IR辐射透明; 第一感测元件包括在由帽盖覆盖的衬底上的一组N个热电偶,其热接点可以接收辐射; 第二感测元件,包括一组N个热电偶,所述N个热电偶在所述基板上被所述盖子覆盖,所述盖子的热接头可能不接收辐射; 用于连接第一感测元件的N1个热电偶的第一连接模块,用于连接第二感测的热电偶的数量N2的第二连接模块; 连接装置,用于将第一感测元件的第一连接模块的输出与第二感测元件的第二连接模块的输出连接,以及感测元件的组合输出的输出。

    SENSOR DEVICE
    2.
    发明申请
    SENSOR DEVICE 审中-公开

    公开(公告)号:US20190107604A1

    公开(公告)日:2019-04-11

    申请号:US16149256

    申请日:2018-10-02

    Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

    SEMICONDUCTOR DEVICE WITH AT LEAST ONE TRUNCATED CORNER AND/OR SIDE CUT-OUT
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH AT LEAST ONE TRUNCATED CORNER AND/OR SIDE CUT-OUT 审中-公开
    具有至少一个截止角和/或侧切口的半导体器件

    公开(公告)号:US20160211219A1

    公开(公告)日:2016-07-21

    申请号:US14991035

    申请日:2016-01-08

    Abstract: A method of producing a substantially rectangular semiconductor device having at least one corner truncation or corner cut-out or side cut-out, comprises: a) providing a semiconductor substrate; b) making at least one opening through the substrate by means of etching; and c) cutting the substrate along a first pair of parallel lines, and along a second pair of parallel lines perpendicular to the first pair. At least one line of the first/second pair passes through said opening. Two lines may pass through said opening. More than one opening may be provided for said device. The opening may be located at a corner or on a side of the otherwise rectangular device. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques.

    Abstract translation: 一种制造具有至少一个拐角截断或拐角切割或侧面切割的基本为矩形的半导体器件的方法,包括:a)提供半导体衬底; b)通过蚀刻使至少一个通过基底的开口; 以及c)沿着第一对平行线切割所述基板,并且沿着垂直于所述第一对的第二对平行线切割所述基板。 第一/第二对的至少一条线穿过所述开口。 两条线可以穿过所述开口。 可以为所述装置提供多于一个的开口。 开口可以位于另外矩形装置的角落或侧面。 蚀刻可以是现有的各向同性/各向异性前/后蚀刻技术的任何组合。

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