公开(公告)号：US20040007468A1

公开(公告)日：2004-01-15

申请号：US10434497

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Dale S. McPherson

IPC: C25D005/02

CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/042 ,  B81C1/00476 ,  B81C2201/014 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

Abstract: Multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching Operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching Operations may be separated by intermediate post processing activities, they may be separated by cleaning Operations, or barrier material removal Operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Abstract translation: 多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望结构的牺牲材料（例如铜）制成。 在结构形成之后，通过多级蚀刻操作去除牺牲材料。 在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。 多级蚀刻操作可以通过中间后处理活动分开，它们可以通过清洁操作或阻隔材料去除操作等分开。 障碍物可以通过与结构材料或基底接触而固定在适当的位置，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留的牺牲材料被蚀刻之后可以被自由地去除。