公开(公告)号：US20130242650A1

公开(公告)日：2013-09-19

申请号：US13886564

申请日：2013-05-03

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aswin Thiruvengadam ,  William Melton ,  Rich Fackenthal ,  Andrew Oen

IPC: G11C13/00

CPC classification number: G11C13/0009 ,  G11C13/0004 ,  G11C13/0069

Abstract: A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.

Abstract translation: 一种用于对存储器件进行编程的存储器件和方法，包括通过以第一值施加电子信号并随后减小信号值来解耦相变存储器单元的方法。 在信号值下降之后，相变存储单元可以基本上结晶。

公开(公告)号：US09082477B2

公开(公告)日：2015-07-14

申请号：US13886564

申请日：2013-05-03

Applicant: Micron Technology, Inc.

Inventor： Aswin Thiruvengadam ,  William Melton ,  Rich Fackenthal ,  Andrew Oen

IPC: G11C7/00 ,  G11C13/00

CPC classification number: G11C13/0009 ,  G11C13/0004 ,  G11C13/0069

Abstract: A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.

Abstract translation: 一种用于对存储器件进行编程的存储器件和方法，包括通过以第一值施加电子信号并随后减小信号值来解耦相变存储器单元的方法。 在信号值下降之后，相变存储单元可以基本上结晶。