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公开(公告)号：US10599039B2
公开(公告)日：2020-03-24
申请号：US15597283
申请日：2017-05-17
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , B08B7/00 , H01L21/311 , H01L21/308 , H01L21/3105
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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公开(公告)号：US10901321B2
公开(公告)日：2021-01-26
申请号：US16822747
申请日：2020-03-18
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , B08B7/00 , H01L21/311 , H01L21/308 , H01L21/3105
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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公开(公告)号：US20180074409A1
公开(公告)日：2018-03-15
申请号：US15597283
申请日：2017-05-17
Applicant: Mattson Technology, Inc.
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , H01L21/308 , H01L21/3105 , B08B7/00
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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公开(公告)号：US20200218158A1
公开(公告)日：2020-07-09
申请号：US16822747
申请日：2020-03-18
Inventor： Vijay M. Vaniapura , Shawming Ma , Li Hou
IPC: G03F7/42 , B08B7/00 , H01L21/311 , H01L21/308 , H01L21/3105
Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
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