公开(公告)号：US20240387762A1

公开(公告)日：2024-11-21

申请号：US18197651

申请日：2023-05-15

Applicant: Maxeon Solar Pte. Ltd.

Inventor： David Smith ,  Gerly Reich

IPC: H01L31/068 ,  H01L31/02 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.