公开(公告)号：US12074232B2

公开(公告)日：2024-08-27

申请号：US15362045

申请日：2016-11-28

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Staffan Westerberg ,  Seung Bum Rim

IPC: H01L31/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0682 ,  H01L31/182 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/50

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.

公开(公告)号：US12142700B2

公开(公告)日：2024-11-12

申请号：US18095769

申请日：2023-01-11

Applicant: Maxeon Solar Pte Ltd.

Inventor： Staffan Westerberg ,  Gabriel Harley

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/18

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

公开(公告)号：US11942565B2

公开(公告)日：2024-03-26

申请号：US17021930

申请日：2020-09-15

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1864 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/50

Abstract: Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.

公开(公告)号：US12176445B2

公开(公告)日：2024-12-24

申请号：US17738978

申请日：2022-05-06

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Staffan Westerberg ,  Gabriel Harley

IPC: H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

公开(公告)号：US20250040290A1

公开(公告)日：2025-01-30

申请号：US18913574

申请日：2024-10-11

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Staffan Westerberg ,  Gabriel Harley

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/18

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.