公开(公告)号：US20050227054A1

公开(公告)日：2005-10-13

申请号：US11061429

申请日：2005-02-18

Applicant: Michael Parthum

Inventor： Michael Parthum

IPC: B32B7/02

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/31504

Abstract: A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

Abstract translation: 一种用于控制MEMS器件中的结构中的残余应力的方法及其结构包括为该结构选择总厚度和总体等效应力。 确定至少一组交替的第一和第二层中的每一个的厚度以控制至少交替的第一和第二层中的每一个相对于中性轴线的内部应力，并且基于所选择的总厚度形成结构 和所选择的整体等效应力。 至少交替的第一和第二层中的每一个被沉积到所确定的至少交替的第一和第二层中的每一个的厚度以形成该结构。