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公开(公告)号：US11179063B1
公开(公告)日：2021-11-23
申请号：US16586976
申请日：2019-09-28
Applicant: Micro Mobio Corporation
Inventor： Zlatko Aurelio Filipovic , Weiping Wang , Adam James Wang , Ikuroh Ichitsubo , Guan-Wu Wang
IPC: H04W4/90 , A61B5/11 , A61B5/00 , A61B5/01 , A61B3/14 , G06F21/70 , G06F21/32 , G06F1/18 , H04M1/02 , H04B1/3888 , G06F1/16 , H04B1/3827 , A61B5/024 , A61B5/332 , H04W88/08 , H04W4/80 , H04W84/12 , H04W84/04 , H04M1/18 , H04M1/72409 , H04M1/72412
Abstract: The present disclosure relates generally to instantaneous communication network systems and methods and, in particular, in one or more embodiments, the present disclosure relates to a first multi-mode and multi-frequency communication device capable of connecting directly with a proximate second first multi-mode and multi-frequency communication device. A display screen on the communication device is capable of displaying icons and avatars over a map to show other communication devices which are proximate.
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公开(公告)号：US20140235184A1
公开(公告)日：2014-08-21
申请号：US13918964
申请日：2013-06-16
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Shinsuke Inui , Guan-Wu Wang , Weiping Wang , ZLatko Aurelio Filipovic
IPC: H04B7/06
CPC classification number: H04B1/38 , H04B1/0067
Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.
Abstract translation: 本公开涉及世界频带射频功率放大器和世界频带射频前端模块。 世界频带功率放大器可以包含至少一个连接到开关的宽带功率放大器，其可以将RF输入信号引导到多个传输路径，每个传输路径被配置为不同的频率。 世界频带RFFE模块是世界频带功率放大器的更集成版本，可以包含宽带RF PA，交换机，逻辑控制，滤波器，双工器和其他主动和被动组件。
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公开(公告)号：US09405332B2
公开(公告)日：2016-08-02
申请号：US14804315
申请日：2015-07-20
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Musaya Kuwano , Koshiro Matsumoto
CPC classification number: G06F1/181 , H03G3/3036
Abstract: A linear amplifier circuit includes a multi-stage power amplifier that can amplify an input signal to produce an output signal, and a gain feedback control circuit coupled with the output and the input of the multi-stage power amplifier. An adjacent-channel leakage feedback control circuit can detect the output signal at the output of the multi-stage power amplifier and reduce adjacent-channel leakage in the output signal over an output power range based on the detected output signal.
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公开(公告)号：US09178555B2
公开(公告)日：2015-11-03
申请号：US13918964
申请日：2013-06-16
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Shinsuke Inui , Guan-Wu Wang , Weiping Wang , Zlatko Aurelio Filipovic
CPC classification number: H04B1/38 , H04B1/0067
Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.
Abstract translation: 本公开涉及世界频带射频功率放大器和世界频带射频前端模块。 世界频带功率放大器可以包含至少一个连接到开关的宽带功率放大器，其可以将RF输入信号引导到多个传输路径，每个传输路径被配置为不同的频率。 世界频带RFFE模块是世界频带功率放大器的更集成版本，可以包含宽带RF PA，交换机，逻辑控制，滤波器，双工器和其他主动和被动组件。
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公开(公告)号：US12095144B1
公开(公告)日：2024-09-17
申请号：US18070281
申请日：2022-11-28
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Masaya Kuwano , Koshirosumo Matsumoto , Guan-Wu Wang , Kanya Kubota
IPC: H01Q1/22 , H01L23/552 , H01L23/66 , H01Q9/04
CPC classification number: H01Q1/2283 , H01L23/552 , H01L23/66 , H01Q9/0407 , H01L2223/6677
Abstract: The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from 6 GHz to 100 GHz. The system comprises of at least one RF antenna and at least one active RF component fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of design and packaging of active and passive RF components into a single package. This in turn allows RF designers to unlock the potential of very high frequencies operation that were previously thought too expensive and/or unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones, tablets, and the like) and fixed applications (such as repeaters, base-stations, and distributed antenna system).
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Patent Agency Ranking
公开(公告)号：US11036262B1
公开(公告)日：2021-06-15
申请号：US16255742
申请日：2019-01-23
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Masaya Kuwano , Koshiro Matsumoto , Guan-Wu Wang
Abstract: A radio frequency (RF) system is described for use in a wireless communication device. The RF system may contain power amplifiers, additional circuitry and components (e.g., gain controllers, phase shifters), and/or antennas. The RF system is described in a variety of different configurations with its functionality divided up over several single chip circuits. Using the single chip circuits simplifies assembly, reduces size, and allows for high speed RF performance demanded by fixed and mobile wireless standards. The system may use a first amplifier circuit combined with an adjacent channel leakage correction circuit so that the output of the first amplifier has the signal leakage substantially cancelled.
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公开(公告)号：US20160079934A1
公开(公告)日：2016-03-17
申请号：US14930632
申请日：2015-11-02
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Shinsuke lnui , Guan-Wu Wang , Weiping Wang , Zlatko Filipovic
CPC classification number: H03F1/42 , H03F3/19 , H03F3/211 , H03F2200/451 , H03F2203/21109 , H04B1/006 , H04B1/0067 , H04B5/0037
Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.
Abstract translation: 本公开涉及世界频带射频功率放大器和世界频带射频前端模块。 世界频带功率放大器可以包含至少一个连接到开关的宽带功率放大器，其可以将RF输入信号引导到多个传输路径，每个传输路径被配置为不同的频率。 世界频带RFFE模块是世界频带功率放大器的更集成版本，可以包含宽带RF PA，交换机，逻辑控制，滤波器，双工器和其他主动和被动组件。
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公开(公告)号：US11515617B1
公开(公告)日：2022-11-29
申请号：US16840218
申请日：2020-04-03
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Masaya Kuwano , Koshiro Matsumoto , Guan-Wu Wang , Kanya Kubota
IPC: H01Q1/22 , H01Q9/04 , H01L23/66 , H01L23/552
Abstract: The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from approximately 6 GigaHertz (GHz) to 100 GHz. The system comprises of at least one RF antenna and at least one RF integrated circuit fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of configuration and packaging of active and passive RF components into a single module. This in turn allows RF manufacturers to unlock the potential of very high frequencies operation that were previously thought too expensive and unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones and tablets) and fixed applications (such as repeaters, base-stations, and distributed antenna systems).
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公开(公告)号：US10938360B1
公开(公告)日：2021-03-02
申请号：US15980679
申请日：2018-05-15
Applicant: Micro Mobio Corporation
Inventor： Adam James Wang , Zlatko Aurelio Filipovic , Ikuroh Ichitsubo , Kanya Kubota
Abstract: A multimode multiband wireless device includes a broadband RF power amplifier that receives RF signals and produces amplified RF signals in a cellular band in a broadband, and a coexist filter coupled to the input of the broadband RF power amplifier. The coexist filter can reject RF noise in a predetermined frequency range in the broadband adjacent to the cellular band.
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公开(公告)号：US10027287B1
公开(公告)日：2018-07-17
申请号：US15369856
申请日：2016-12-05
Applicant: Micro Mobio Corporation
Inventor： Ikuroh Ichitsubo , Shinsuke Inui , Guan-Wu Wang , Weiping Wang , Zlatko Filipovic
Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. The module may also include a thermal protection system capable of effecting operation of the broadband power amplifier.
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