公开(公告)号：US20220336277A1

公开(公告)日：2022-10-20

申请号：US17230833

申请日：2021-04-14

Applicant: Micron Technology, Inc.

Inventor： Trupti D. Gawai ,  David A. Kewley ,  Aaron M. Lowe ,  Radhakrishna Kotti ,  David S. Pratt

IPC: H01L21/768 ,  H01L23/535

Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.

公开(公告)号：US20230163030A1

公开(公告)日：2023-05-25

申请号：US18151378

申请日：2023-01-06

Applicant: Micron Technology, Inc.

Inventor： Trupti D. Gawai ,  David A. Kewley ,  Aaron M. Lowe ,  Radhakrishna Kotti ,  David S. Pratt

IPC: H01L21/768 ,  H01L23/535

CPC classification number: H01L21/76895 ,  H01L21/76805 ,  H01L23/535

Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.

公开(公告)号：US11574842B2

公开(公告)日：2023-02-07

申请号：US17230833

申请日：2021-04-14

Applicant: Micron Technology, Inc.

Inventor： Trupti D. Gawai ,  David A. Kewley ,  Aaron M. Lowe ,  Radhakrishna Kotti ,  David S. Pratt

IPC: H01L21/768 ,  H01L23/535

Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.