公开(公告)号：US20230397423A1

公开(公告)日：2023-12-07

申请号：US18307698

申请日：2023-04-26

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  Yongjun J. Hu ,  Pavan Reddy Kumar Aella ,  David Ross Economy ,  Brittany L. Kohoutek ,  Amritesh Rai

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A method of forming a microelectronic device includes forming conductive interconnect structures vertically extending through isolation material to conductive contact structures coupled to pillar structures, forming a metal silicide material on the interconnect structures and the first isolation material, forming a conductive material on the metal silicide material, and forming a dielectric material over the conductive material. The method further includes forming openings vertically extending through the dielectric material, the conductive material, the metal silicide material, and the isolation material and forming additional isolation material to extend over remaining portions of the dielectric material and at least partially fill the openings. Related devices and systems are disclosed.