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公开(公告)号:US11953988B2
公开(公告)日:2024-04-09
申请号:US16858281
申请日:2020-04-24
Applicant: Micron Technology, Inc.
Inventor: Scott E Schaefer , Aaron P. Boehm
IPC: G06F11/10 , G11C11/22 , H03M13/45 , G06F3/06 , G06F11/20 , G06F13/00 , G11C7/10 , G11C11/4093 , G11C29/52 , H03M13/00 , H03M13/19
CPC classification number: G06F11/1068 , G11C11/221 , G11C11/2273 , G11C11/2275 , H03M13/458 , G06F3/0659 , G06F11/1052 , G06F11/201 , G06F13/00 , G11C7/1006 , G11C11/4093 , G11C29/52 , H03M13/19 , H03M13/6561
Abstract: Methods, systems, and devices for a memory device with an error correction memory device with fast data access are described. For example, during a read operation, a memory device may be configured to output the data indicated by the read operation concurrent with performing an error correction operation. If the memory device detects an error, the memory device may indicate the error to a host device and, in some cases, output the corrected data to the host device. During a write operation, the memory device may store error detection or correction information associated with data to be stored at the memory device. The memory device may, in some cases, store error detection or correction information generated by the host device.
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公开(公告)号:US12237844B2
公开(公告)日:2025-02-25
申请号:US17961805
申请日:2022-10-07
Applicant: Micron Technology, Inc.
Inventor: Aaron P. Boehm , Scott E Schaefer
Abstract: Methods, systems, and devices for error detection and classification at a host device are described. A host device may communicate a read command for a codeword stored at a memory device. In response to communicating the read command, the host device may receive the codeword and an error indication bit that indicates whether the memory device detected an error in the codeword. The host device may use the codeword to generate a set of syndrome bits. The host device may determine an error status of the codeword based on the error indication bit for the codeword and the set of syndrome bits for the codeword.
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公开(公告)号:US12141028B2
公开(公告)日:2024-11-12
申请号:US17959902
申请日:2022-10-04
Applicant: Micron Technology, Inc.
Inventor: Scott E Schaefer
Abstract: Methods, systems, and devices for error status determination at a memory device are described. A memory device may generate, based on syndrome bits for a codeword read from a memory, an error detection signal for the codeword that indicates whether an error has been detected in the codeword. The memory device may generate, based on the syndrome bits, an error correction signal for the codeword that indicates whether an error has been corrected in the codeword. And the memory device may provide an indication of the error detection signal and an indication of the error correction signal to a host device.
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