公开(公告)号：US20200371870A1

公开(公告)日：2020-11-26

申请号：US16989478

申请日：2020-08-10

Applicant: Micron Technology, Inc.

Inventor： Harish Reddy Singidi ,  Kishore Kumar Muchherla ,  Xiangang Luo ,  Vamsi Pavan Ravaprolu ,  Ashutosh Malshe

IPC: G06F11/10 ,  G06F11/14

Abstract: A variety of applications can include use of parity groups in a memory system with the parity groups arranged for data protection of the memory system. Each parity group can be structured with multiple data pages in which to write data and a parity page in which to write parity data generated from the data written in the multiple data pages. Each data page of a parity group can have storage capacity to include metadata of data written to the data page. Information can be added to the metadata of a data page with the information identifying an asynchronous power loss status of data pages that precede the data page in an order of writing data to the data pages of the parity group. The information can be used in re-construction of data in the parity group following an uncorrectable error correction code error in writing to the parity group.