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1.发明申请CHEMICAL MECHANICAL POLISHING (CMP) PROCESSING OF THROUGH-SILICON VIA (TSV) AND CONTACT PLUG SIMULTANEOUSLY 有权化学机械抛光（CMP）通过硅（TSV）和接触片同时处理公开(公告)号：US20110244676A1
公开(公告)日：2011-10-06
申请号：US12750364
申请日：2010-03-30
Applicant: Ming-Fa CHEN , I-Ching LIN
Inventor： Ming-Fa CHEN , I-Ching LIN
IPC: H01L21/768
CPC classification number: H01L21/76898 , H01L21/76838
Abstract: A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process.
Abstract translation: 一种方法包括在接触孔和TSV开口中形成导电材料，然后执行一个步骤以去除接触孔外部的导电材料和TSV开口，以将导电材料留在接触孔和TSV开口中，由此 分别形成接触塞和TSV结构。 在一些实施例中，通过CMP工艺执行去除步骤。
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2.发明申请CHEMICAL MECHANICAL POLISHING (CMP) PROCESSING OF THROUGH-SILICON VIA (TSV) AND CONTACT PLUG SIMULTANEOUSLY 审中-公开化学机械抛光（CMP）通过硅（TSV）和接触片同时处理公开(公告)号：US20120258590A1
公开(公告)日：2012-10-11
申请号：US13527337
申请日：2012-06-19
Applicant: Ming-Fa CHEN , I-Ching LIN
Inventor： Ming-Fa CHEN , I-Ching LIN
IPC: H01L21/768
CPC classification number: H01L21/76898 , H01L21/76838
Abstract: A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process.
Abstract translation: 一种方法包括在接触孔和TSV开口中形成导电材料，然后执行一个步骤以去除接触孔外部的导电材料和TSV开口，以将导电材料留在接触孔和TSV开口中，由此 分别形成接触塞和TSV结构。 在一些实施例中，通过CMP工艺执行去除步骤。
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