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    Thin-film ESD protection device with compact size
    2.
    发明授权
    Thin-film ESD protection device with compact size 有权

    公开(公告)号：US11469593B2

    公开(公告)日：2022-10-11

    申请号：US16351694

    申请日：2019-03-13

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Souko Fukahori ,  Nobuo Sakai

    IPC: H02H9/04 ,  H01L49/02 ,  H01L27/02

    Abstract: A thin-film ESD protection device includes a semiconductor substrate including a low-resistivity portion at least adjacent to a first principal surface thereof; an insulating layer formed on the first principal surface; first and second input/output electrodes, and a ground electrode formed on a surface of the insulating layer. Moreover, a diode element and a capacitor element are formed adjacent to the first principal surface. The diode element is connected at a first end thereof to the first input/output electrode and connected at a second end thereof to the ground electrode. The capacitor element is connected at a third end thereof to the second input/output electrode and connected at a fourth end thereof to the ground electrode. The second end of the diode element and the fourth end of the capacitor element are connected by the low-resistivity portion of the semiconductor substrate to the ground electrode.

    THIN-FILM ESD PROTECTION DEVICE
    4.
    发明申请
    THIN-FILM ESD PROTECTION DEVICE 审中-公开

    公开(公告)号：US20190214815A1

    公开(公告)日：2019-07-11

    申请号：US16351694

    申请日：2019-03-13

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Souko Fukahori ,  Nobuo Sakai

    IPC: H02H9/04 ,  H01L27/02 ,  H01L49/02

    Abstract: A thin-film ESD protection device includes a semiconductor substrate including a low-resistivity portion at least adjacent to a first principal surface thereof; an insulating layer formed on the first principal surface; first and second input/output electrodes, and a ground electrode formed on a surface of the insulating layer. Moreover, a diode element and a capacitor element are formed adjacent to the first principal surface. The diode element is connected at a first end thereof to the first input/output electrode and connected at a second end thereof to the ground electrode. The capacitor element is connected at a third end thereof to the second input/output electrode and connected at a fourth end thereof to the ground electrode. The second end of the diode element and the fourth end of the capacitor element are connected by the low-resistivity portion of the semiconductor substrate to the ground electrode.

    VARIABLE CAPACITANCE DEVICE
    6.
    发明申请
    VARIABLE CAPACITANCE DEVICE 有权
    可变电容器件

    公开(公告)号：US20160351556A1

    公开(公告)日：2016-12-01

    申请号：US15239196

    申请日：2016-08-17

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： TOSHIYUKI NAKAISO ,  Nobuo Sakai

    IPC: H01L27/02 ,  B81B7/00 ,  H01L29/93

    CPC classification number: H01L27/0248 ,  B81B7/0022 ,  B81B2201/0221 ,  H01G4/33 ,  H01G7/06 ,  H01L27/0805 ,  H01L28/55 ,  H01L29/93

    Abstract: A variable capacitance device that includes a semiconductor substrate, a redistribution layer disposed on a surface of the semiconductor substrate, and a plurality of terminal electrodes including first and second input/output terminals, a ground terminal and a control voltage application terminal. Moreover, a variable capacitance element section is formed in the redistribution layer from a pair of capacitor electrodes connected to the first and second input/output terminals, respectively, and a ferroelectric thin film disposed between the capacitor electrodes. Further, an ESD protection element is connected between the one of the input/output terminals and the ground terminal is formed on the surface of the semiconductor substrate.

    Abstract translation: 一种可变电容装置，包括半导体衬底，设置在半导体衬底的表面上的再分配层，以及包括第一和第二输入/输出端子的多个端子电极，接地端子和控制电压施加端子。 此外，在再分配层中分别从连接到第一和第二输入/输出端子的一对电容器电极和设置在电容器电极之间的铁电薄膜形成可变电容元件部分。 此外，ESD保护元件连接在一个输入/输出端子之间，并且接地端子形成在半导体衬底的表面上。

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