公开(公告)号：US11284533B2

公开(公告)日：2022-03-22

申请号：US16852594

申请日：2020-04-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shuichi Kawata ,  Takafumi Moriasa ,  Masatoshi Kakue ,  Masahiko Shigaki ,  Yuichi Kusano ,  Norihiro Kawahara

IPC: H05K7/20 ,  H05K1/18 ,  H05K1/11 ,  H05K1/02 ,  H01L23/473

Abstract: A cooling module includes an electroosmotic pump. The electroosmotic pump includes a first electrode which is permeable to a cooling fluid, a second electrode which is located with an interval from the first electrode and is permeable to the fluid, and a dielectric layer which is located between the first electrode and the second electrode and includes a microchannel which is permeable to the fluid. The first electrode and the second electrode have different polarities.

公开(公告)号：US11703040B2

公开(公告)日：2023-07-18

申请号：US17187921

申请日：2021-03-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takafumi Moriasa ,  Shuichi Kawata ,  Masahiko Shigaki ,  Yuichi Kusano

IPC: F28F3/12 ,  H01L23/473 ,  F04B19/00 ,  F28F9/22

CPC classification number: F04B19/006 ,  H01L23/473

Abstract: A pump includes a pump flow path and electrodes and dielectric members in the pump flow path to allow a fluid to pass through the electrodes and the dielectric members in a flowing direction. The electrodes and the dielectric members are alternately stacked in the flowing direction so that a dielectric member is located between adjacent electrodes. Among the electrodes, an inter-electrode polarity of each pair of electrodes is different from that of an adjacent pair of electrodes. The dielectric members include a first dielectric member at a position of an odd-numbered dielectric member counted from the most upstream side of the flowing direction and a second dielectric member at a position of an even-numbered dielectric member counted from the most upstream side of the flowing direction. Material of the first and second dielectric members provide signs of a zeta potential opposite to each other.

公开(公告)号：US09343522B2

公开(公告)日：2016-05-17

申请号：US14100116

申请日：2013-12-09

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Mitsutoshi Kawamoto ,  Atsushi Sano ,  Tatsuya Ishikawa ,  Yasutomo Kobayashi ,  Yoshihiro Fujita ,  Yuki Kimura ,  Yuichi Kusano

IPC: H01L21/02 ,  H01L49/02 ,  C04B35/47 ,  H01G4/30 ,  H01G4/12 ,  B82Y30/00

CPC classification number: H01L28/55 ,  B82Y30/00 ,  C04B35/47 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/5463 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/6583 ,  C04B2235/6586 ,  H01G4/1227 ,  H01G4/30 ,  Y10T428/2982

Abstract: A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface area of 4.0 m2/g or more and 8.0 m2/g or less, and a cumulative 90% grain size D90 of 1.2 μm or less.

Abstract translation: 一种用于具有优异耐ESD电压的晶界绝缘半导体陶瓷的陶瓷粉末，使用该陶瓷粉末的半导体陶瓷电容器及其制造方法。 用于SrTiO 3系晶界绝缘半导体陶瓷的陶瓷粉末的比表面积为4.0m 2 / g以上且8.0m 2 / g以下，累积90％粒径D90为1.2μm以下。

公开(公告)号：US20140091432A1

公开(公告)日：2014-04-03

申请号：US14100116

申请日：2013-12-09

Applicant: MURATA MANUFACTURING CO.,LTD.

Inventor： Mitsutoshi Kawamoto ,  Atsushi Sano ,  Tatsuya Ishikawa ,  Yasutomo Kobayashi ,  Yoshihiro Fujita ,  Yuki Kimura ,  Yuichi Kusano

IPC: H01L49/02 ,  C04B35/47

CPC classification number: H01L28/55 ,  B82Y30/00 ,  C04B35/47 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/5463 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/6583 ,  C04B2235/6586 ,  H01G4/1227 ,  H01G4/30 ,  Y10T428/2982

Abstract: A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface area of 4.0 m2/g or more and 8.0 m2/g or less, and a cumulative 90% grain size D90 of 1.2 μm or less.

Abstract translation: 一种用于具有优异耐ESD电压的晶界绝缘半导体陶瓷的陶瓷粉末，使用该陶瓷粉末的半导体陶瓷电容器及其制造方法。 用于SrTiO 3系晶界绝缘半导体陶瓷的陶瓷粉末的比表面积为4.0m 2 / g以上且8.0m 2 / g以下，累积90％粒径D90为1.2μm以下。