-
公开(公告)号：US20240113092A1
公开(公告)日：2024-04-04
申请号：US18483406
申请日：2023-10-09
Applicant: NANOSYS, INC.
IPC: H01L25/16 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/24 , H01L33/32 , H01L33/40 , H01L33/56 , H01L33/62
CPC classification number: H01L25/167 , H01L33/0025 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/24 , H01L33/32 , H01L33/405 , H01L33/56 , H01L33/62 , H01L2933/005 , H01L2933/0066
Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.
-
公开(公告)号：US20220384404A1
公开(公告)日：2022-12-01
申请号：US17818822
申请日：2022-08-10
Applicant: NANOSYS, INC.
IPC: H01L25/16 , H01L33/40 , H01L33/62 , H01L33/56 , H01L33/12 , H01L33/06 , H01L33/32 , H01L33/24 , H01L33/08 , H01L33/00
Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.
-
Search Results
2
records
(took 0.009 seconds)
