公开(公告)号：US20230387350A1

公开(公告)日：2023-11-30

申请号：US18187516

申请日：2023-03-21

Applicant: NANOSYS, INC.

Inventor： Fariba DANESH ,  Richard P. SCHNEIDER ,  Fan REN ,  Michael JANSEN ,  Nathan GARDNER

IPC: H01L33/32 ,  H01L25/00 ,  H01L25/075 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06 ,  H01L33/24 ,  H01L33/60 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L25/50 ,  H01L25/0753 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06 ,  H01L33/24 ,  H01L33/60 ,  H01L33/0095 ,  H01L2224/16225 ,  H01L2224/95

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.