公开(公告)号：US09703197B2

公开(公告)日：2017-07-11

申请号：US15024407

申请日：2014-09-25

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Toyohiro Chikyo ,  Takayuki Nakane

IPC: G03F7/20 ,  G03F7/32 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0278

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.