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    Image sensor element and imaging device
    1.
    发明授权
    Image sensor element and imaging device 有权

    公开(公告)号：US12238440B2

    公开(公告)日：2025-02-25

    申请号：US17279712

    申请日：2019-09-27

    Applicant: NIKON CORPORATION

    Inventor： Ryoji Ando ,  Toru Takagi ,  Takashi Seo ,  Yoshiyuki Watanabe ,  Shutaro Kato

    IPC: H04N25/77 ,  H01L27/146 ,  H04N25/704

    Abstract: An image sensor element includes: a first pixel having a first photoelectric conversion part, a first accumulation part which accumulates electric charge generated by the first photoelectric conversion part, and a first output part based on a voltage of the first accumulation part; a second pixel having a second photoelectric conversion part, a second accumulation part wherein electric charge generated by the second photoelectric conversion part, and a second output part which a second signal based on a voltage of the second accumulation part; an output line to which the first and the second output parts are connected and from which the first and second signals are output; and a control unit which is able to control the voltage of the first accumulation part to be a first voltage and ability to control the voltage of the second accumulation part to be a second voltage different from the first voltage.

    Image sensor and image capture device
    3.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US11152420B2

    公开(公告)日：2021-10-19

    申请号：US16861592

    申请日：2020-04-29

    Applicant: NIKON CORPORATION

    Inventor： Shigeru Matsumoto ,  Toru Takagi

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

    POLARIZATION PROPERTY IMAGE MEASUREMENT DEVICE, AND POLARIZATION PROPERTY IMAGE MEASUREMENT METHOD
    4.
    发明申请
    POLARIZATION PROPERTY IMAGE MEASUREMENT DEVICE, AND POLARIZATION PROPERTY IMAGE MEASUREMENT METHOD 审中-公开

    公开(公告)号：US20180292310A1

    公开(公告)日：2018-10-11

    申请号：US16003882

    申请日：2018-06-08

    Applicant: NIKON CORPORATION

    Inventor： Takanori KOJIMA ,  Satoru Odate ,  Toru Takagi

    IPC: G01N21/21 ,  H01L27/146 ,  G01N21/31 ,  G06T7/521 ,  G06T15/00 ,  A61B1/00 ,  A61B1/04 ,  A61B1/06

    Abstract: A polarization property image measurement device includes: a first radiation unit that radiates light beams in different polarization conditions onto a target object after subjecting the light beams to intensity modulation at frequencies different from one another; a light receiving unit including first photoelectric conversion units that photoelectrically convert the light beams having been radiated from the first radiation unit and scattered at the target object in correspondence to each of the different polarization conditions, and second photoelectric conversion units that photoelectrically convert visible light from the target object; and a processor that detects signals individually output from the first photoelectric conversion units at the different frequencies and differentiates each signal from other signals so as to determine an origin of the signal as one of the light beams; and creates an image of the target object based upon signals individually output from the second photoelectric conversion units.

    Image-capturing element manufacturing method, image-capturing element and image-capturing device
    5.
    发明授权
    Image-capturing element manufacturing method, image-capturing element and image-capturing device 有权

    公开(公告)号：US10937823B2

    公开(公告)日：2021-03-02

    申请号：US16823673

    申请日：2020-03-19

    Applicant: NIKON CORPORATION

    Inventor： Tadashi Narui ,  Toru Takagi

    IPC: H01L27/146 ,  H04N5/369 ,  H04N5/378 ,  H04N5/347 ,  H04N7/18

    Abstract: An image-capturing element manufacturing method includes: preparing a first substrate having a plurality of pixels that are two-dimensionally continuously arrayed; preparing a second substrate having a plurality of circuit blocks that respectively have connection terminals to a power supply and a reference potential and that are electrically independent from each other, each of the plurality of circuit blocks having at least some of circuits to read out signals from the plurality of pixels; laminating the first substrate and the second substrate to electrically couple the plurality of circuit blocks and the plurality of pixels overlapping therewith; and cutting circuit blocks around at least one of the plurality of circuit blocks and pixels overlapping therewith to form a laminate in which the plurality of pixels are laminated onto the at least one of the plurality of circuit blocks.

    Image sensor and image capture device
    6.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US10680031B2

    公开(公告)日：2020-06-09

    申请号：US16084908

    申请日：2017-02-28

    Applicant: NIKON CORPORATION

    Inventor： Shigeru Matsumoto ,  Toru Takagi

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

    Image-capturing device and image-capturing system
    7.
    发明授权
    Image-capturing device and image-capturing system 有权

    公开(公告)号：US11057578B2

    公开(公告)日：2021-07-06

    申请号：US16283058

    申请日：2019-02-22

    Applicant: NIKON CORPORATION

    Inventor： Masahiro Juen ,  Toru Takagi ,  Osamu Saruwatari ,  Wataru Funamizu ,  Sota Nakanishi

    IPC: H04N5/351 ,  H04N5/376 ,  H01L27/146 ,  H04N5/378

    Abstract: An image-capturing device allowing skew reduction, and an image-capturing system allowing skew reduction are provided. An image-capturing device is provided, including a plurality of photoelectric converting units; and a plurality of light-receiving units that are arranged corresponding to a plurality of blocks each constituted by one or more photoelectric converting units, and receive drive light instructing driving of the photoelectric converting units to output a drive signal to a corresponding photoelectric converting unit among the photoelectric converting units. In addition, an image-capturing system is provided, including the image-capturing device; and a light-emitting unit that is spaced apart from the plurality of light-receiving units, and emits the drive light to the plurality of light-receiving units.

    Image sensor and image capture device
    10.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US10720465B2

    公开(公告)日：2020-07-21

    申请号：US16084908

    申请日：2017-02-28

    Applicant: NIKON CORPORATION

    Inventor： Shigeru Matsumoto ,  Toru Takagi

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

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