公开(公告)号：US20250003882A1

公开(公告)日：2025-01-02

申请号：US18760099

申请日：2024-07-01

Applicant: NOVA LTD

Inventor： GILAD BARAK ,  YANIR HAINICK ,  YONATAN OREN

IPC: G01N21/65 ,  G01B11/06 ,  G01L1/00 ,  G01L1/24 ,  G01N21/01 ,  G01N21/95 ,  G03F7/00 ,  H01L21/66

Abstract: A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

公开(公告)号：US20220120690A1

公开(公告)日：2022-04-21

申请号：US17504547

申请日：2021-10-19

Applicant: NOVA LTD

Inventor： GILAD BARAK ,  YANIR HAINICK ,  YONATAN OREN

IPC: G01N21/65 ,  G01B11/06 ,  G01N21/95 ,  G03F7/20 ,  H01L21/66 ,  G01L1/24

Abstract: A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.