公开(公告)号：US20160155676A1

公开(公告)日：2016-06-02

申请号：US15015952

申请日：2016-02-04

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

Abstract translation: 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20140209562A1

公开(公告)日：2014-07-31

申请号：US14231554

申请日：2014-03-31

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20130309415A1

公开(公告)日：2013-11-21

申请号：US13890346

申请日：2013-05-09

Applicant: NOVELLUS SYSTEMS, INC.

Inventor： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC: C23C16/52

CPC classification number: C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

Abstract: Systems and methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (b) or (d) for a first predetermined period.

Abstract translation: 用于处理衬底的系统和方法包括：a）将衬底布置在处理室中的基座上; b）将前体供应到处理室; c）清洗处理室; d）执行射频（RF）等离子体激活; e）清洗处理室; 以及f）在（c）或（e）中的至少一个中清洗处理室之前，在（b）中的至少一个中将处理室​​的真空压力设定为小于真空压力的第一预定压力， 或（d）第一预定时段。

公开(公告)号：US09786570B2

公开(公告)日：2017-10-10

申请号：US15015952

申请日：2016-02-04

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US09287113B2

公开(公告)日：2016-03-15

申请号：US14074617

申请日：2013-11-07

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

Abstract translation: 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US20150107513A1

公开(公告)日：2015-04-23

申请号：US14580965

申请日：2014-12-23

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/505

CPC classification number: C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

Abstract: A system for processing a substrate include a processing chamber including a pedestal to support a substrate and a controller configured to a) supply precursor to the processing chamber; b) purge the processing chamber; c) perform radio frequency (RF) plasma activation; d) purge the processing chamber; and e) prior to purging the processing chamber in at least one of (b) or (d), set a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (a) or (c) for a first predetermined period.

Abstract translation: 一种用于处理衬底的系统包括：处理室，包括用于支撑衬底的基座和被配置为a）将前体供给到处理室的处理室; b）吹扫处理室; c）执行射频（RF）等离子体激活; d）吹扫处理室; 以及e）在（b）或（d）中的至少一个中清洗处理室之前，将处理室的真空压力设定为在（a）中的至少一个期间小于真空压力的第一预定压力， 或（c）第一预定期间。

公开(公告)号：US10741458B2

公开(公告)日：2020-08-11

申请号：US15965628

申请日：2018-04-27

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180247875A1

公开(公告)日：2018-08-30

申请号：US15965628

申请日：2018-04-27

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170316988A1

公开(公告)日：2017-11-02

申请号：US15650662

申请日：2017-07-14

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.