公开(公告)号：US08871103B2

公开(公告)日：2014-10-28

申请号：US14049232

申请日：2013-10-09

Applicant: Nanya Technology Corp.

Inventor： Brett Busch ,  Gowri Damarla ,  Anurag Jindal ,  Chia-Yen Ho ,  Thy Tran

IPC: H01L21/306 ,  H01L21/321 ,  H01L27/108

CPC classification number: H01L21/30625 ,  H01L21/3212 ,  H01L27/10894

Abstract: A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the blanket stop layer as a stop layer when the layer is lower than or at a same level as the blanket stop layer or using the layer as a stop layer when the blanket stop layer is lower than or at a same level as the layer, or a selective dry etch is performed to remove the layer in the raised region. Thus, the layer in the raised region can be easily removed without occurrence of dishing in the non-raised region which is protected by the blanket stop layer.