-
公开(公告)号：US20160037680A1
公开(公告)日：2016-02-04
申请号：US14703476
申请日：2015-05-04
Inventor： Fengze Hou , Tingyu Lin
IPC: H05K7/20
CPC classification number: H01L23/473 , H01L23/4735 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H05K7/20345 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A solution for dissipating heat generated from high power chip packages, e.g., a fcBGA package, wbBGA package, 2.5D/3D TSV package, PoP, etc. The heat dissipation system may include a high power chip package including a high power chip. A micro-jet may be attached to the high power chip. A micro-pump may be in fluidic communication with the micro-jet. A heat exchanger may be in fluidic communication with the micro-pump. The high power chip package is assembled on the same PCB with the micro-pump and the heat exchanger.
Abstract translation: 用于耗散大功率芯片封装产生的热量的解决方案，例如fcBGA封装，wbBGA封装，2.5D / 3D TSV封装，PoP等。散热系统可以包括包括大功率芯片的大功率芯片封装。 微喷射器可以附接到大功率芯片。 微型泵可能与微型喷射器流体连通。 热交换器可以与微型泵流体连通。 大功率芯片封装与微型泵和热交换器组装在同一PCB上。
-
公开(公告)号：US20210223122A1
公开(公告)日：2021-07-22
申请号：US16304730
申请日：2017-11-24
Inventor： Wen Yin , Heng Yang , Chuanguo Dou , Wenqi Zhang , Tingyu Lin , Liqiang Cao
IPC: G01L1/18 , H01L41/113 , H01L41/047
Abstract: The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer. The resistance measured by applying an external voltage between the first electrode and the second electrode can be used to indicator a stress of the TSV structure, in particular an axial stress thereof, so that the stress sensor can be used to measure a stress of the TSV structure.
-
公开(公告)号：US11067459B1
公开(公告)日：2021-07-20
申请号：US16304730
申请日：2017-11-24
Inventor： Wen Yin , Heng Yang , Chuanguo Dou , Wenqi Zhang , Tingyu Lin , Liqiang Cao
IPC: G01L1/00 , G01L1/18 , H01L41/113 , H01L41/047
Abstract: The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer. The resistance measured by applying an external voltage between the first electrode and the second electrode can be used to indicator a stress of the TSV structure, in particular an axial stress thereof, so that the stress sensor can be used to measure a stress of the TSV structure.
-
公开(公告)号：US09653378B2
公开(公告)日：2017-05-16
申请号：US14703476
申请日：2015-05-04
Inventor： Fengze Hou , Tingyu Lin
IPC: H01L23/473 , H05K7/20
CPC classification number: H01L23/473 , H01L23/4735 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H05K7/20345 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A solution for dissipating heat generated from high power chip packages, e.g., a fcBGA package, wbBGA package, 2.5D/3D TSV package, PoP, etc. The heat dissipation system may include a high power chip package including a high power chip. A micro-jet may be attached to the high power chip. A micro-pump may be in fluidic communication with the micro-jet. A heat exchanger may be in fluidic communication with the micro-pump. The high power chip package is assembled on the same PCB with the micro-pump and the heat exchanger.
-
-
-
Search Results
4
records
(took 0.016 seconds)
