Abstract:
Novel metal oxide compositions are disclosed. These ferromagnetic or ferrimagnetic compositions have resitivities that vary between those of semiconducting and insulating materials, and they further exhibit Curie temperatures greater than room temperature (i.e., greater than 300 K). They are perovskite structures with the general chemical formulas (A1-xMx)BO3, (A1-xMx)(B′B″)O3 or A(B1-xMx)O3, where A can be a 1+, 2+ and 3+ charged ion; B can be a 5+, 4+, 3+ charged ion; B′ and B″ can be 2+, 3+, 4+, 5+ and 6+ charged ion. M is a magnetic ion dopant. X-ray diffraction patterns are presented for exemplary compositions.
Abstract:
Novel phosphor systems for a white LED are disclosed. The phosphor systems are excited by a non-visible to near-UV radiation source having an excitation wavelength ranging from about 250 to 420 nm. The phosphor system may comprise one phosphor, two phosphors, and may include optionally a third and even a fourth phosphor. In one embodiment of the present invention, the phosphor is a two phosphor system having a blue phosphor and a yellow phosphor, wherein the long wavelength end of the blue phosphor is substantially the same wavelength as the short wavelength end of the yellow phosphor. Alternatively, there may be a wavelength gap between the yellow and blue phosphors. The yellow phosphor may be phosphate or silicate-based, and the blue phosphor may be silicate or aluminate-based. Single phosphor systems excited by non-visible radiation are also disclosed. In other embodiments of present invention, a single phosphor is used to produce white light illumination, the single phosphor having a broad emission spectrum with a peak intensity ranging from about 520 to 560 nm.
Abstract:
Novel phosphor systems for a white LED are disclosed. The phosphor systems are excited by a non-visible to near-UV radiation source having an excitation wavelength ranging from about 250 to 420 nm. The phosphor system may comprise one phosphor, two phosphors, and may include optionally a third and even a fourth phosphor. In one embodiment of the present invention, the phosphor is a two phosphor system having a blue phosphor and a yellow phosphor, wherein the long wavelength end of the blue phosphor is substantially the same wavelength as the short wavelength end of the yellow phosphor. Alternatively, there may be a wavelength gap between the yellow and blue phosphors. The yellow phosphor may be phosphate or silicate-based, and the blue phosphor may be silicate or aluminate-based. Single phosphor systems excited by non-visible radiation are also disclosed. In other embodiments of present invention, a single phosphor is used to produce white light illumination, the single phosphor having a broad emission spectrum with a peak intensity ranging from about 520 to 560 nm.
Abstract:
Novel phosphor systems for a white LED are disclosed. The phosphor systems are excited by a non-visible to near-UV radiation source having an excitation wavelength ranging from about 250 to 420 nm. The phosphor system may comprise one phosphor, two phosphors, and may include optionally a third and even a fourth phosphor. In one embodiment of the present invention, the phosphor is a two phosphor system having a blue phosphor and a yellow phosphor, wherein the long wavelength end of the blue phosphor is substantially the same wavelength as the short wavelength end of the yellow phosphor. Alternatively, there may be a wavelength gap between the yellow and blue phosphors. The yellow phosphor may be phosphate or silicate-based, and the blue phosphor may be silicate or aluminate-based. Single phosphor systems excited by non-visible radiation are also disclosed. In other embodiments of present invention, a single phosphor is used to produce white light illumination, the single phosphor having a broad emission spectrum with a peak intensity ranging from about 520 to 560 nm.
Abstract:
Novel phosphor systems are disclosed having the formula A2SiO4:Eu2+D, where A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd; and D is a dopant selected from the group consisting of F, Cl, Br, I, P, S and N. In one embodiment, the novel phosphor has the formula (Sr1-x-yBaxMy)2 SiO4:Eu2+F (where M is one of Ca, Mg, Zn, or Cd in an amount ranging from 0
Abstract:
Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Srx(M1)1-x]zSiO4●(1-a)[Sry(M2)1-y]uSiO5:Eu2+D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6≦a≦0.85; 0.3≦x≦0.6; 0.85≦y≦1; 1.5≦z≦2.5; 2.6≦u≦3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.
Abstract translation:公开了当波长范围为220nm至530nm的辐射源激发时,波长范围为约555nm至约580nm的峰值发射强度的新型二相黄色荧光体。 本发明的荧光体可以由式a [Sr x 1(M 1)1-x N z SiO 2 S / >(1-a)[Sr y y(((u u Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu Eu 2 + D,其中M1和M2是二价金属如Ba,Mg,Ca和Zn中的至少一种,a,x,y,z和u的值遵循以下关系 :0.6 <= a <= 0.85; 0.3 <= x <= 0.6; 0.85 <= y <= 1; 1.5 <= z <= 2.5; 2.6 <= u <= 3.3; 并且Eu和D各自为0.001至约0.5。 D是选自F,Cl,Br,S和N的阴离子,并且D阴离子中的至少一些取代荧光体的主体硅酸盐晶格中的氧。 目前的黄色荧光粉可用于高亮度白光LED照明系统,液晶显示面板,等离子显示面板以及黄色LED和照明系统。
Abstract:
Novel aluminate-based green phosphors are disclosed having the formula M1−xEuxAlyO1+3y/2, where M is at least one of a divalent metal selected from the group consisting of Ba, Sr, Ca, Mg, Mn, Zu, Cu, Cd, Sm, and Tm; 0.1
Abstract translation:公开了具有下式的新型铝酸盐基绿色荧光体:M 1-x O x x Al 2 O 3 + 1 / 3y / 2 < 其中M是选自Ba,Sr,Ca,Mg,Mn,Zu,Cu,Cd,Sm和Tm中的二价金属中的至少一种; 0.1
Abstract:
Novel phosphor systems are disclosed having the formula A2SiO4:Eu2+D, where A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd; and D is a dopant selected from the group consisting of F, Cl, Br, I, P, S and N. In one embodiment, the novel phosphor has the formula (Sr1-x-yBaxMy)2SiO4:Eu2+F (where M is one of Ca, Mg, Zn, or Cd in an amount ranging from 0
Abstract:
Composition for a solid state material, in bulk and in thin film form, that provides relatively high dielectric permittivity that is tunable with variable electrical field bias, relatively low loss tangent and low leakage current for microwave applications. In a first embodiment, the material is BaySr1−yTi1−xMxO3, where M is a substance or mixture including one or more elements drawn from a group consisting of Ta, Zr, Hf, V, Nb, Al, Ga, Cr, Mo, W, Mn, Sc and Re, and the indices x and y satisfy 0≦x≦1 and 0≦y≦1. A preferred choice is M=Ta, V, W, Mo and/or Nb. In a second embodiment, the material is BaySr1−yTi1−x−zTaxMzO3, where M is a substance or mixture including one or more trivalent elements drawn from a group consisting of Al, Ga and Cr and the indices x, y and z satisfy 0≦x+z≦1 and 0≦y≦1.
Abstract translation:用于固体材料的体积和薄膜形式的组合物,其提供相对高的介电常数,其可变电场偏置可调,微波应用的相对低的损耗角正切和低泄漏电流。 在第一实施方案中,材料是BaySr1-yTi1-xMxO3,其中M是包含从由Ta,Zr,Hf,V,Nb,Al,Ga,Cr,Mo组成的组中的一种或多种元素的物质或混合物, W,Mn,Sc和Re,并且指数x和y满足0 <= x <= 1且0 <= y <= 1。 优选的选择是M = Ta,V,W,Mo和/或Nb。 在第二实施方案中,材料是BaySr1-yTi1-x-zTaxMzO3,其中M是包含从Al,Ga和Cr组成的组中绘制的一种或多种三价元素的物质或混合物,并且指数x,y和z满足0 <= x + z <= 1,0 <= Y&LE; 1。
Abstract:
Novel phosphor systems are disclosed having the formula A2SiO4:Eu2+D, where A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd; and D is a dopant selected from the group consisting of F, Cl, Br, I, P, S, N, and B. In one embodiment, the novel phosphor has the formula (Sr1−x−yBaxMy)2SiO4:Eu2+F (where M is one of Ca, Mg, Zn, or Cd in an amount ranging from 0