公开(公告)号：US11779278B2

公开(公告)日：2023-10-10

申请号：US16484922

申请日：2018-02-09

Applicant: NIHON KOHDEN CORPORATION ,  OSAKA UNIVERSITY ,  NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY ,  SPChange, LLC.

Inventor： Kaoru Imajo ,  Katsuyoshi Suzuki ,  Masayuki Hirata ,  Seiji Kameda ,  Takafumi Suzuki ,  Hiroshi Ando ,  Takatsugu Kamata

IPC: A61B5/00 ,  A61B5/291

CPC classification number: A61B5/6868 ,  A61B5/0006 ,  A61B5/0031 ,  A61B5/291

Abstract: An internal device (1) is implanted in a living body (300). A control section (6) causes a communication section (5) to wirelessly transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through a group of N (N is 2 or more) electrodes, to an external device (200). When the communication section (5) receives a designation signal designating a group of M electrode(s) (2a), M being smaller than N, the communication section (5) is caused to transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through the group of M electrode(s) (2a), to the external device (200) in real time.

公开(公告)号：US11766133B2

公开(公告)日：2023-09-26

申请号：US17022061

申请日：2020-09-15

Applicant: FUNAI ELECTRIC CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Naoyuki Wakabayashi ,  Fuminori Tanaka ,  Jun Sugimoto ,  Masayuki Hirata ,  Yuka Omura ,  Kanae Kusakabe

IPC: A47C20/04 ,  A61G7/00 ,  A61G7/07 ,  A61G7/057

CPC classification number: A47C20/048 ,  A61G7/001 ,  A61G7/05776 ,  A61G7/07 ,  A61G2203/34

Abstract: A mattress 100 includes a movable part 1 and a mattress body 2 including a first mattress part 21 disposed above the movable part 1, and a second mattress part 22 provided separately from the first mattress part 21 and disposed to surround the first mattress part in a plan view. The first mattress part 21 is configured to rotate upward about the predetermined rotation axis by the movable part 1.

公开(公告)号：US20170049398A1

公开(公告)日：2017-02-23

申请号：US15251577

申请日：2016-08-30

Applicant: Osaka University

Inventor： Masayuki Hirata ,  Toshiki Yoshimine ,  Kojiro Matsushita ,  Tetsu Goto ,  Takufumi Yanagisawa ,  Takafumi Suzuki ,  Shinichi Yoshimura

IPC: A61B5/00 ,  A61F2/28 ,  G06F3/01 ,  A61B5/0478

CPC classification number: A61B5/6868 ,  A61B5/0478 ,  A61B2562/164 ,  A61B2562/166 ,  A61B2562/222 ,  A61F2/2875 ,  A61N1/0531 ,  A61N1/375 ,  G06F3/015

Abstract: To allow an implantable device including an electronic circuit to be implanted in the head in a more preferable manner in terms of appearance and safely. This implantable device is used for a brain-machine interface or the like. A casing of an implantable device configured to be implanted in a human head has an outer convexity surface matching an external shape of a resected skull related to at least a craniotomy site of the artificial bone designed in accordance with a skull shape of each person in order to fill the craniotomy site. That is, the outer convexity surface of the artificial bone is provided with two functions: the original function of filling the craniotomy site as the artificial bone and a function of serving as the casing of the implantable device.

Abstract translation: 在外观上和安全性方面，允许将包括电子电路的可植入装置以更优选的方式植入头部。 该可植入装置用于脑机接口等。 构造成植入人头部的可植入装置的外壳具有与根据每个人的颅骨形状设计的人造骨的至少颅骨切开部位相关的切除头骨的外部形状的外凸面， 填充开颅手术部位。 也就是说，人造骨的外凸表面具有两个功能：将开颅部位作为人造骨填充的原始功能和作为可植入装置的外壳的功能。

公开(公告)号：US12285600B2

公开(公告)日：2025-04-29

申请号：US17757966

申请日：2020-12-18

Applicant: OSAKA UNIVERSITY

Inventor： Seiji Kameda ,  Masayuki Hirata

IPC: H03F1/30 ,  A61N1/02 ,  A61N1/08 ,  G01K7/00 ,  G05F1/567 ,  H03G3/10 ,  H03K17/081 ,  H03K17/08

Abstract: A resistance device (100) includes a field-effect transistor (TN) and a voltage applying circuit (1). The voltage applying circuit (1) applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect transistor (TN). The control voltage (Vgs) is a voltage obtained by adding a correction voltage (Vc) to a reference voltage (Vgs0). The correction voltage (Vc) depends on the temperature (T) and is set to be zero at a first temperature (T1).