公开(公告)号：US11004876B2

公开(公告)日：2021-05-11

申请号：US16528307

申请日：2019-07-31

Applicant: OSRAM OLED GMBH

Inventor： Christoph Eichler ,  Andre Somers ,  Harald Koenig ,  Bernhard Stojetz ,  Andreas Loeffler ,  Alfred Lell

IPC: H01L21/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01S5/22 ,  H01L33/02 ,  H01L33/00 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/20 ,  H01S5/223 ,  H01L33/08 ,  H01L33/12

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.