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公开(公告)号：US20220263293A1
公开(公告)日：2022-08-18
申请号：US17594399
申请日：2020-04-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Muhammad Ali , Harald König , Bernhard Stojetz , Alfred Lell
IPC: H01S5/40 , H01S5/024 , H01S5/30 , H01S5/02315
Abstract: In one embodiment, the semiconductor laser comprises a carrier and one or more laser bars. The at least one laser bar comprises at least three individual lasers arranged parallel to each other. A deflection optic is arranged downstream of the individual lasers in common. The at least one laser bar and the associated deflection optic are mounted on the carrier and comprise a distance from one another of at most 4 mm.
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公开(公告)号：US20210391695A1
公开(公告)日：2021-12-16
申请号：US17292197
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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Patent Agency Ranking
公开(公告)号：US10910226B2
公开(公告)日：2021-02-02
申请号：US16335968
申请日：2017-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad Ali , Thomas Adlhoch
IPC: H01L21/285 , H01S5/042 , H01L33/00 , H01L21/268
Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
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公开(公告)号：US12021351B2
公开(公告)日：2024-06-25
申请号：US17292197
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
CPC classification number: H01S5/4031 , H01S5/02407 , H01S5/34346
Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than |ΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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公开(公告)号：US12009632B2
公开(公告)日：2024-06-11
申请号：US17284997
申请日：2019-10-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Muhammad Ali , Harald König , Sven Gerhard , Alfred Lell
CPC classification number: H01S5/0202 , H01S5/0203 , H01S5/02375 , H01S5/0282 , H01S5/1017 , H01S5/22 , H01S5/34333
Abstract: In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.
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公开(公告)号：US20220337027A1
公开(公告)日：2022-10-20
申请号：US17312113
申请日：2019-11-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , André Somers , Harald König , Muhammad Ali
Abstract: An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously. Furthermore, a method for producing an optoelectronic component (1) is specified.
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公开(公告)号：US20210391685A1
公开(公告)日：2021-12-16
申请号：US17284997
申请日：2019-10-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Muhammad Ali , Harald König , Sven Gerhard , Alfred Lell
Abstract: In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.
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